Philips Semiconductors
Product specification
High-speed diodes
FEATURES
•
Small hermetically sealed glass
SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
•
High-speed switching
•
Fast logic applications.
handbook, 4 columns
PMLL4148; PMLL4448
DESCRIPTION
The PMLL4148 and PMLL4448 are high-speed switching diodes fabricated in
planar technology, and encapsulated in small hermetically sealed glass
SOD80C SMD packages.
k
a
MAM061
The marking band indicates the cathode.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
−
−
−
−
MIN.
MAX.
75
75
200
450
V
V
mA
mA
UNIT
1999 May 27
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
PMLL4148
PMLL4448
I
R
I
R
C
d
t
rr
reverse current
reverse current; PMLL4448
diode capacitance
reverse recovery time
see Fig.3
I
F
= 10 mA
I
F
= 5 mA
I
F
= 100 mA
V
R
= 20 V; see Fig.5
CONDITIONS
PMLL4148; PMLL4448
MIN.
−
620
−
−
−
1
MAX.
V
UNIT
720
1
25
50
3
4
4
mV
V
nA
µA
µA
pF
ns
V
R
= 20 V; T
j
= 150
°C;
see Fig.5
V
R
= 20 V; T
j
= 100
°C;
see Fig.5
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 50 mA;
t
r
=
20 ns; see Fig.8
V
fr
forward recovery voltage
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
300
350
UNIT
K/W
K/W
1999 May 27
3
Philips Semiconductors
Product specification
High-speed diodes
GRAPHICAL DATA
PMLL4148; PMLL4448
handbook, halfpage
300
MBG451
handbook, halfpage
600
MBG464
IF
(mA)
200
IF
(mA)
400
(1)
(2)
(3)
100
200
0
0
100
Tamb (
o
C)
200
0
0
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 27
4
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