PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 03 — 11 April 2005
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers.
Table 1:
Product overview
Package
Philips
PMEG2010EH
PMEG3010EH
PMEG4010EH
PMEG2010EJ
PMEG3010EJ
PMEG4010EJ
SOD323F
SC-90
single diode
SOD123F
JEITA
-
single diode
Configuration
Type number
1.2 Features
s
Forward current:
≤
1 A
s
Very low forward voltage
1.3 Applications
s
Low voltage rectification
s
High efficiency DC-to-DC conversion
s
Inverse polarity protection
s
Low power consumption applications
1.4 Quick reference data
Table 2:
I
F
V
R
Quick reference data
Conditions
T
sp
≤
55
°C
Min
-
-
-
-
I
F
= 1000 mA
[1]
Symbol Parameter
forward current
reverse voltage
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
V
F
forward voltage
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Typ
-
-
-
-
420
450
540
Max
1
20
30
40
500
560
640
Unit
A
V
V
V
mV
mV
mV
-
-
-
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3:
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
001aab540
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4:
Ordering information
Package
Name
PMEG2010EH
PMEG3010EH
PMEG4010EH
PMEG2010EJ
PMEG3010EJ
PMEG4010EJ
SC-90
plastic surface mounted package; 2 leads
SOD323F
-
Description
plastic surface mounted package; 2 leads
Version
SOD123F
Type number
4. Marking
Table 5:
Marking codes
Marking code
A9
AA
AB
AH
AK
AL
Type number
PMEG2010EH
PMEG3010EH
PMEG4010EH
PMEG2010EJ
PMEG3010EJ
PMEG4010EJ
9397 750 14817
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 11 April 2005
2 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
reverse voltage
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
I
F
I
FRM
I
FSM
P
tot
forward current
repetitive peak forward current
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.25
-
-
-
-
-
-
20
30
40
1
7
9
V
V
V
A
A
A
Conditions
Min
Max
Unit
non-repetitive peak forward current square wave;
t
p
= 8 ms
total power dissipation
SOD123F
SOD323F
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
-
-
-
-
-
−65
−65
375
830
350
830
150
+150
+150
mW
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
[1]
Min
Typ
Max
Unit
thermal resistance from junction in free air
to ambient
SOD123F
SOD323F
[2]
[3]
[2]
[3]
-
-
-
-
-
-
-
-
330
150
350
150
K/W
K/W
K/W
K/W
R
th(j-sp)
thermal resistance from junction
to solder point
SOD123F
SOD323F
-
-
-
-
60
55
K/W
K/W
[1]
Schottky barrier rectifier thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse power
losses P
R
and I
F(AV)
rating are available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[2]
[3]
9397 750 14817
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 11 April 2005
3 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
V
F
forward voltage
PMEG2010EH, PMEG2010EJ
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
PMEG3010EH, PMEG3010EJ
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
PMEG4010EH, PMEG4010EJ
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
I
R
reverse current
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
C
d
diode capacitance
PMEG2010EH, PMEG2010EJ
PMEG3010EH, PMEG3010EJ
PMEG4010EH, PMEG4010EJ
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
90
150
210
280
355
420
90
150
215
285
380
450
95
155
220
295
420
540
15
40
12
40
7
30
Max
130
190
240
330
390
500
130
200
250
340
430
560
130
210
270
350
470
640
40
200
30
150
20
100
Unit
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
µA
µA
µA
µA
µA
µA
V
R
= 10 V
V
R
= 20 V
V
R
= 10 V
V
R
= 30 V
V
R
= 10 V
V
R
= 40 V
V
R
= 1 V;
f = 1 MHz
-
-
-
66
55
43
80
70
50
pF
pF
pF
9397 750 14817
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 11 April 2005
4 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
10
3
I
F
(mA)
10
2
006aaa247
I
R
(µA)
10
5
10
4
10
3
(1)
(2)
(3)
006aaa248
10
(1)
(2)
(3)
(4)
(5)
10
2
10
(4)
1
1
10
−1
10
−2
(5)
10
−1
10
−2
0
0.1
0.2
0.3
0.4
V
F
(V)
0.5
10
−3
0
4
8
12
16
V
R
(V)
20
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1. PMEG2010EH, PMEG2010EJ: Forward current
as a function of forward voltage; typical values
120
C
d
(pF)
80
Fig 2. PMEG2010EH, PMEG2010EJ: Reverse current
as a function of reverse voltage; typical values
006aaa249
40
0
0
4
8
12
16
V
R
(V)
20
T
amb
= 25
°C;
f = 1 MHz
Fig 3. PMEG2010EH, PMEG2010EJ: Diode capacitance as a function of reverse voltage; typical values
9397 750 14817
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 11 April 2005
5 of 12
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