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PMGD280UN

Description
Dual N-channel mTrenchMOS ultra low level FET
CategoryDiscrete semiconductor    The transistor   
File Size78KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PMGD280UN Overview

Dual N-channel mTrenchMOS ultra low level FET

PMGD280UN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum drain current (Abs) (ID)0.87 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.4 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
PMGD280UN
Dual N-channel
µTrenchMOS™
ultra low level FET
MBD128
Rev. 01 — 10 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Surface mounted package
s
Dual device
s
Low on-state resistance
s
Footprint 40% smaller than SOT23
s
Fast switching
s
Low threshold voltage.
1.3 Applications
s
Driver circuits
s
Switching in portable appliances.
1.4 Quick reference data
s
V
DS
20 V
s
P
tot
0.41 W
s
I
D
0.87 A
s
R
DSon
340 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simplified outline and symbol
Description
source (s1)
gate (g1)
drain (d2)
source (s2)
gate (g2)
drain (d1)
s1
1
Top view
2
3
MSA370
Simplified outline
6
5
4
Symbol
d1
d2
g1
s2
g2
MSD901
SOT363 (SC-88)
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