DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4010PD
PNP transistor/Schottky diode
module
Product specification
2002 Oct 28
Philips Semiconductors
Product specification
PNP transistor/Schottky diode module
FEATURES
•
600 mW total power dissipation
•
High current capability
•
Reduces required PCB area
•
Reduced pick and place costs
•
Small plastic SMD package.
Transistor:
•
Low collector-emitter saturation voltage.
Diode:
•
Ultra high-speed switching
•
Very low forward voltage
•
Guard ring protected.
handbook, halfpage
6
PMEM4010PD
PINNING
PIN
1
2
3
4
5
6
emitter
not connected
cathode
anode
base
collector
DESCRIPTION
5
4
4
3
6
APPLICATIONS
•
DC/DC convertors
•
Inductive load drivers
•
General purpose load drivers
•
Reverse polarity protection circuits.
DESCRIPTION
Combination of a PNP transistor with low V
CEsat
and high
current capability and a planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
NPN complement: PMEM4010ND.
Marking code:
B2.
5
1
1
2
3
MGU868
Fig.1 Simplified outline (SOT457) and symbol.
2002 Oct 28
2
Philips Semiconductors
Product specification
PNP transistor/Schottky diode module
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
NPN transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
T
j
V
R
I
F
I
FSM
T
j
P
tot
T
stg
T
amb
Note
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
junction temperature
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
t = 8.3 ms half sinewave;
JEDEC method
−
−
T
amb
≤
25
°C;
note 1
−
−65
−65
PARAMETER
CONDITIONS
MIN.
PMEM4010PD
MAX.
−40
−40
−5
−1
−2
−1
150
UNIT
V
V
V
A
A
A
°C
V
A
A
°C
mW
°C
°C
Schottky barrier diode
continuous reverse voltage
continuous forward current
non repetitive peak forward current
junction temperature
20
1
5
125
Combined device
total power dissipation
storage temperature
operating ambient temperature
600
+150
+125
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
208
UNIT
K/W
2002 Oct 28
3
Philips Semiconductors
Product specification
PNP transistor/Schottky diode module
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
NPN transistor
I
CBO
collector-base cut-off current
V
CB
=
−40
V; I
E
= 0
V
CB
=
−40
V; I
E
= 0;
T
amb
= 150
°C
I
CEO
I
EBO
h
FE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
V
CE
=
−30
V; I
B
= 0
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−1
mA
V
CE
=
−5
V; I
C
=
−100
mA
V
CE
=
−5
V; I
C
=
−500
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CEsat
collector-emitter saturation voltage
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−100
mA
V
BEsat
R
CEsat
V
BEon
f
T
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
I
C
=
−1
A; I
B
=
−50
mA
I
C
=
−500
mA; I
B
=
−50
mA;
note 1
V
CE
=
−5
V; I
C
=
−1
A
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
−
−
−
−
300
300
250
160
−
−
−
−
−
−
150
PARAMETER
CONDITIONS
MIN.
PMEM4010PD
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
300
−
−
MAX.
−100
−50
−100
−100
−
800
−
−
−140
−170
−310
−1.1
<340
−1
−
UNIT
nA
µA
nA
nA
mV
mV
mV
V
mΩ
V
MHz
Schottky barrier diode
V
F
continuous forward voltage
I
F
= 10 mA; note 1
I
F
= 100 mA; note 1
I
F
= 1000 mA; see Fig.7; note 1
I
R
reverse current
V
R
= 5 V; note 1
V
R
= 8 V; note 1
V
R
= 15 V; see Fig.8; note 1
C
d
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
diode capacitance
V
R
= 5 V; f = 1 MHz; see Fig.9
−
−
−
−
−
−
−
240
300
480
5
7
10
19
270
350
550
10
20
50
25
mV
mV
mV
µA
µA
µA
pF
2002 Oct 28
4
Philips Semiconductors
Product specification
PNP transistor/Schottky diode module
PMEM4010PD
handbook, halfpage
1200
MHC088
hFE
1000
(1)
handbook, halfpage
−10
MHC089
VBE
(V)
800
600
(2)
−1
(1)
(2)
400
(3)
(3)
200
−10
−1
−10
−1
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
−1
−10
−10
2
−10
3
−10
4
IC (mA)
PNP transistor;
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
PNP transistor;
V
CE
=
−5
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
3
handbook, halfpage
VCEsat
(mV)
−10
2
MHC090
10
2
handbook, halfpage
RCEsat
(Ω)
MHC091
10
(1)
−10
(2)
(3)
1
(1)
(2)
(3)
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
10
−1
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
PNP transistor;
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
PNP transistor;
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
2002 Oct 28
5
Embedded System
京公网安备 11010802033920号
EEWORLD
