NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
• NF = 1.3 dB
• NF = 1.3 dB
TYP.
TYP.
PACKAGE DIMENSIONS
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
(Units: mm)
2.1 ± 0.1
1.25 ± 0.1
• Super Mini-Mold package
EIAJ: SC-70
2.0 ± 0.2
0.3
+0.1
–0
0.65 0.65
ORDERING INFORMATION
PART
NUMBER
2SC5184-T1
2
T86
3 000 units/reel
Embossed tape, 8 mm wide,
Pin No. 3 (collector)
0.9 ± 0.1
Pins No. 1 (emitter) and No. 2 (base)
facing the perforations
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
30
90
150
–65 to +150
V
V
V
mA
mW
˚
C
˚
C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12108EJ2V0DS00 (2nd edition)
(Previous No. TC-2481)
Date Published November 1996 N
Printed in Japan
0 to 0.1
Remark:
Contact your NEC sales representative to order samples for
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