DATA SHEET
SILICON TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
NF = 1.3 dB
NF = 1.3 dB
TYP.
TYP.
PACKAGE DIMENSIONS
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2.1± 0.2
1.25 ± 0.1
(Units: mm)
• Super Mini-Mold package
ORDERING INFORMATION
2
0.65
0.3
+0.1
–0.05
3
2.0 ± 0.2
(1.25)
0.60
2SC5185-T1
+0.1
–0.05
(emitter) facing the perforations
3 000 units/reel
2SC5185-T2
Embossed tape, 8 mm wide,
pins No. 1 (collector) and No. 2
(emitter) facing the perforations
0.9 ± 0.1
1
evaluation.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
30
90
150
–65 to +150
V
V
V
mA
mW
°C
°C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12109EJ2V0DS00 (2nd edition)
(Previous No. TC-2482)
Date Published November 1996 N
Printed in Japan
0 to 0.1
©
0.15
+0.1
–0.05
* Contact your NEC sales representative to order samples for
0.3
4
0.3
+0.1
–0.05
Embossed tape, 8 mm wide,
pins No. 3 (base), and No. 4
0.4
(1.3)
PART
NUMBER
QUANTITY
ARRANGEMENT
0.3
+0.1
–0.05
T86
1994
2SC5185
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feed-Back Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
|S
21e
|
2
|S
21e
|
2
NF
NF
f
T
f
T
C
re
10
8
70
8
7.5
11
9
1.3
1.3
13
11
0.3
0.6
2.0
2.0
MIN.
TYP.
MAX.
100
100
140
dB
dB
dB
dB
GHz
GHz
pF
UNIT
nA
nA
CONDITIONS
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 20 mA
*1
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0, f = 1 MHz
*2
*1
*2
Measured with pulses: Pulse width
≤
350
µ
s, duty cycle
≤
2 %, pulsed.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
h
FE
Class
Class
Marking
h
FE
FB
T86
70 to 140
2
2SC5185
CHARACTERISTICS CURVES (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
P
T
- Total Power Dissipation - mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Passive Air
Cooling
200
I
C
- Collector Current - mA
40
30
100
90 mW
20
10
0
50
100
150
0
0.5
V
BE
- Base to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
T
A
- Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
I
C
- Collector Current - mA
500
h
FE
- DC Current Gain
20
15
10
5
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
1.0
2.0
3.0
200
100
50
V
CE
= 2 V
V
CE
= 1 V
20
10
0
1
2
5
10
20
50
100
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
f
T
- Gain Bandwidth Product - GHz
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14
|S
21e
|
2
- Insertion Power Gain - dB
f = 2 GHz
2V
f = 2 GHz
14
12
10
8
6
4
2
1
2
5
10
20
100
I
C
- Collector Current - mA
V
CE
= 1 V
12
2V
V
CE
= 1 V
8
10
6
4
1
2
5
10
20
30
100
I
C
- Collector Current - mA
3
2SC5185
NOISE FIGURE vs.
COLLECTOR CURRENT
4
0.6
f = 2 GHz
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
NF - Noise Figure - dB
3
C
re
- Feed-back Capacitance - pF
0.5
V
CE
= 1 V
2
V
CE
= 2 V
1
0.4
0.3
0
1
2
5
10
20
100
I
C
- Collector Current - mA
0.2
0
1.0
2.0
3.0
4.0
5.0
V
CB
- Collector to Base Voltage - V
4
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