PMD10K60 datasheet, PDF - EEWORLD Datasheet

PMD10K60: DescriptionSILICON POWER DARLING TRANSISTORSl; CategoryDiscrete semiconductor The transistor; File Size142KB，1 Pages; ManufacturerCentral Semiconductor

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PMD10K60 Overview

SILICON POWER DARLING TRANSISTORSl

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-204AA
package instruction	TO-3, 2 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	800
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz

Central

145 Adams Avenue,

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

Semiconductor Corp.

	PMD10K60	PMD11K80	PMD11K60	PMD11K100	PMD11K	PMD10K80	PMD10K100	PMD10K
Description	SILICON POWER DARLING TRANSISTORSl	SILICON POWER DARLING TRANSISTORSl	Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	SILICON POWER DARLING TRANSISTORSl	SILICON POWER DARLING TRANSISTORSl	SILICON POWER DARLING TRANSISTORSl	SILICON POWER DARLING TRANSISTORSl	SILICON POWER DARLING TRANSISTORSl

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