DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBTA92
PNP high-voltage transistor
Product specification
Supersedes data of 1998 Jul 21
1999 Apr 13
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Telephony
•
Professional communication equipment.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: PMBTA42.
handbook, halfpage
PMBTA92
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
MARKING
TYPE NUMBER
PMBTA92
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗2D
Top view
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−300
−300
−5
−100
−200
−100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 13
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PMBTA92
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−200
V
I
C
= 0; V
EB
=
−3
V
V
CE
=
−10
V; note 1
I
C
=
−1
mA;
I
C
=
−10
mA
I
C
=
−30
mA
V
CEsat
V
BEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
=
−20
mA; I
B
=
−2
mA
I
C
=
−20
mA; I
B
=
−2
mA
I
E
= i
e
= 0; V
CB
=
−20
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−20
V;
f = 100 MHz
25
40
25
−
−
−
50
−
−
−
−500
−900
6
−
mV
mV
pF
MHz
−
−
MIN.
MAX.
−250
−100
UNIT
nA
nA
1999 Apr 13
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBTA92
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 13
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
PMBTA92
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 13
5
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