DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
PMBT5401
PNP high-voltage transistor
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 15
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 150 V).
APPLICATIONS
•
Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: PMBT5550.
handbook, halfpage
PMBT5401
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
MARKING
TYPE NUMBER
PMBT5401
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗2L
Top view
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−160
−150
−5
−300
−600
−100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−120
V
I
E
= 0; V
CB
=
−120
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−4
V
V
CE
=
−5
V; (see Fig.2)
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
V
CEsat
V
BEsat
C
c
f
T
F
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
base-emitter saturation voltage
collector capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
E
=i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−10
V;
f = 100 MHz; T
amb
= 25
°C
I
C
=
−200 µA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz; T
amb
= 25
°C
50
60
50
−
−
−
−
−
100
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMBT5401
VALUE
500
UNIT
K/W
MAX.
−50
−50
−50
−
240
−
−200
−500
−1
−1
6
300
8
UNIT
nA
µA
nA
mV
mV
V
V
pF
MHz
dB
1999 Apr 15
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PMBT5401
handbook, full pagewidth
200
MGD813
hFE
150
VCE =
−5
V
100
50
0
−10
−1
−1
−10
−10
2
IC mA
−10
3
Fig.2 DC current gain; typical values.
1999 Apr 15
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBT5401
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 15
5
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