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PMBFJ309

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size62KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PMBFJ309 Overview

SMALL SIGNAL, FET

PMBFJ309 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
FET technologyJUNCTION
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect
transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Sep 11

PMBFJ309 Related Products

PMBFJ309 PMBFJ310 PMBFJ308
Description SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET
Is it Rohs certified? conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
FET technology JUNCTION JUNCTION JUNCTION
JESD-609 code e3 e3 e3
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
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