DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ210; PMBFJ211;
PMBFJ212
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
1997 Dec 01
Philips Semiconductors
Product specification
N-channel field-effect transistors
FEATURES
•
High speed switching
•
Interchangeability of drain and source connections
•
High impedance.
APPLICATIONS
•
Analog switches
•
Choppers, multiplexers and commutators
•
Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
SOT23 package.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
PMBFJ210; PMBFJ211; PMBFJ212
PINNING - SOT23
PIN
1
2
3
SYMBOL
s
d
g
drain
gate
DESCRIPTION
source
handbook, halfpage
3
d
s
g
1
Top view
2
MAM385
Marking codes:
PMBFJ210: M68.
PMBFJ211: M69.
PMBFJ212: M70.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSoff
PARAMETER
drain-source voltage
gate-source cut-off voltage
PMBFJ210
PMBFJ211
PMBFJ212
I
DSS
drain current
PMBFJ210
PMBFJ211
PMBFJ212
P
tot
y
fs
total power dissipation
common-source transfer admittance
PMBFJ210
PMBFJ211
PMBFJ212
T
amb
≤
25
°C
V
GS
= 0; V
DS
= 15 V
4
6
7
12
12
12
mS
mS
mS
V
GS
= 0; V
DS
= 15 V
2
7
15
−
15
20
40
250
mA
mA
mA
mW
I
D
= 1 nA; V
DS
= 15 V
−1
−2.5
−4
−3
−4.5
−6
V
V
V
CONDITIONS
−
MIN.
MAX.
±25
UNIT
V
1997 Dec 01
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GSO
V
DGO
I
G
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient; note 1
VALUE
500
UNIT
K/W
PARAMETER
drain-source voltage
gate-source voltage
drain-gate voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
T
amb
≤
25
°C;
note 1; see Fig.13
open drain
open source
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
±25
−25
−25
10
250
150
150
V
V
V
mA
mW
°C
°C
UNIT
1997 Dec 01
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
STATIC CHARACTERISTICS
T
j
= 25
°C.
SYMBOL
V
(BR)GSS
V
GSoff
PARAMETER
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ210
PMBFJ211
PMBFJ212
V
GSS
I
DSS
gate-source forward voltage
drain current
PMBFJ10
PMBFJ11
PMBFJ12
I
GSS
y
fs
reverse gate leakage current
common-source transfer admittance
PMBFJ210
PMBFJ211
PMBFJ212
y
os
common source output admittance
PMBFJ210
PMBFJ211
PMBFJ212
DYNAMIC CHARACTERISTICS
T
amb
= 25
°C.
SYMBOL
C
is
C
os
C
rs
g
is
g
fs
g
rs
g
os
V
n
PARAMETER
input capacitance
output capacitance
feedback capacitance
common source input conductance
common source transfer conductance
common source feedback conductance
common source output conductance
equivalent input noise voltage
PMBFJ210; PMBFJ211; PMBFJ212
CONDITIONS
I
G
=
−1 µA;
V
DS
= 0
I
D
= 1 nA; V
DS
= 15 V
−
MIN.
MAX.
−25
−3
−4.5
−6
1
15
20
40
−100
12
12
12
150
200
200
V
V
V
V
V
UNIT
−1
−2.5
−4
I
G
= 0; V
DS
= 0
V
GS
= 0; V
DS
= 15 V
2
7
15
V
GS
=
−15
V; V
DS
= 0
V
GS
= 0; V
DS
= 15 V
4
6
7
V
GS
= 0; V
DS
= 15 V
−
−
−
−
−
mA
mA
mA
pA
mS
mS
mS
µS
µS
µS
CONDITIONS
V
DS
= 15 V; V
GS
=
−10
V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
V
DS
= 15 V; V
GS
=
−10
V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
V
DS
= 15 V; V
GS
=
−10
V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 100 MHz
V
DS
= 15 V; V
GS
= 0; f = 450 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 kHz
2
4
TYP.
UNIT
pF
pF
pF
pF
pF
pF
µS
mS
mS
mS
µS
µS
µS
µS
nV/√Hz
0.8
2
0.8
0.9
70
1.1
7.5
7.5
−8
−90
95
200
5
1997 Dec 01
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
handbook, halfpage
40
MGM277
handbook, halfpage
12
MGM278
IDSS
(mA)
30
yfs
(mS)
8
20
4
10
0
0
−2
−4
V
−6
GSoff (V)
0
0
−2
−4
V
−6
GSoff (V)
V
DS
= 15 V; T
j
= 25
°C.
V
DS
= 15 V; T
j
= 25
°C.
Fig.3
Fig.2
Drain current as a function of gate-source
cut-off voltage; typical values.
Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
handbook, halfpage
80
MGM279
handbook, halfpage
8
MGM280
gos
(µS)
60
ID
(mA)
6
VGS = 0 V
−200
mV
40
4
−400
mV
−600
mV
20
2
−800
mV
−1.4
V
−1
V
−1.2
V
8
10
VDS (V)
0
0
−2
−4
V
−6
GSoff (V)
0
0
2
4
6
V
DS
= 15 V; T
amb
= 25
°C.
Fig.4
Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
PMBFJ210.
T
j
= 25
°C.
Fig.5 Output characteristics; typical values.
1997 Dec 01
5
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