DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors
Product specification
N-channel field-effect transistors
FEATURES
•
Low noise
•
Interchangeability of drain and
source connections
•
High gain.
handbook, halfpage
PMBF5484;
PMBF5485; PMBF5486
3
d
s
DESCRIPTION
N-channel, symmetrical, silicon
junction FETs in a surface-mountable
SOT23 envelope. Intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
PINNING - SOT23
PIN
1
2
3
drain
gate
QUICK REFERENCE DATA
SYMBOL
V
DS
I
DSS
PARAMETER
drain-source
voltage
drain current
PMBF5484
PMBF5485
PMBF5486
P
tot
V
GS(off)
total power
dissipation
gate-source cut-off
voltage
PMBF5484
PMBF5485
PMBF5486
Y
fs
common source
transfer admittance
PMBF5484
PMBF5485
PMBF5486
V
DS
= 15 V;
V
GS
= 0; f = 1 kHz
3
3.5
4
6
7
8
mS
mS
mS
up to T
amb
= 25
°C
V
DS
= 15 V;
I
D
= 1 nA
−0.3
−0.5
−2
−3
−4
−6
V
V
V
V
DS
= 15 V; V
GS
= 0
1
4
8
−
5
10
20
250
mA
mA
mA
mW
CONDITIONS
MIN.
−
MAX. UNIT
25
V
DESCRIPTION
source
Fig.1 Simplified outline and symbol.
g
1
Top view
2
MAM385
MARKING CODES:
PMBF5484: p6B
PMBF5485: p6M
PMBF5486: p6H
April 1995
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
gate-drain voltage
DC forward gate current
total power dissipation
storage temperature
junction temperature
up to T
amb
= 25
°C
(note 1)
CONDITIONS
PMBF5484; PMBF5485;
PMBF5486
MIN.
−
−
−
−
−
−65
−
MAX.
25
−25
−25
10
250
+150
150
V
V
V
UNIT
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)GSS
I
DSS
PARAMETER
gate-source breakdown voltage
drain current
PMBF5484
PMBF5485
PMBF5486
I
GSS
V
GSS
V
GS(off)
reverse gate leakage current
gate-source forward voltage
gate-source cut-off voltage
PMBF5484
PMBF5485
PMBF5486
Y
fs
common source transfer admittance
PMBF5484
PMBF5485
PMBF5486
Y
os
common source output admittance
PMBF5484
PMBF5485
PMBF5486
V
DS
= 15 V; V
GS
= 0
−
−
−
50
60
75
µS
µS
µS
V
DS
= 15 V; V
GS
= 0
3
3.5
4
6
7
8
mS
mS
mS
V
DS
= 0; V
GS
=
−15
V
V
DS
= 0; I
G
= 1 mA
V
DS
= 15 V; I
D
= 1 nA
−0.3
−0.5
−2
−3
−4
−6
V
V
V
CONDITIONS
V
DS
= 0; I
G
=
−1 µA
V
DS
= 15 V; V
GS
= 0
1
4
8
−
−
5
10
20
−1
1
mA
mA
mA
nA
V
MIN.
−25
−
MAX.
V
UNIT
PARAMETER
from junction to ambient (note 1)
THERMAL RESISTANCE
500 K/W
April 1995
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
DYNAMIC CHARACTERISTICS
T
j
= 25
°C;
V
DS
= 15 V; V
GS
= 0
SYMBOL
C
is
C
os
C
rs
g
is
PARAMETER
input capacitance
output capacitance
feedback capacitance
common source input conductance
PMBF5484
PMBF5485; PMBF5486
g
fs
common source transfer conductance
PMBF5484
PMBF5485
PMBF5486
g
os
common source output conductance
PMBF5484
PMBF5485; PMBF5486
V
n
equivalent input noise voltage
f = 100 MHz
f = 400 MHz
f = 100 Hz
f = 100 MHz
f = 400 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
PMBF5484; PMBF5485;
PMBF5486
CONDITIONS
f = 1 MHz
f = 1 MHz
f = 1 MHz
MIN.
−
−
−
100
−
2.5
3
3.5
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
5
MAX.
5
2
1
−
1
−
1
1
75
100
−
UNIT
pF
pF
pF
µS
mS
mS
mS
mS
µS
µS
nV/√Hz
handbook,
25
halfpage
MRC168
MRC169
I DSS
(mA)
handbook,
10
halfpage
Y fs
(mS)
8
20
15
6
10
4
5
2
0
0
2
4
6
–VGS(off) (V)
0
0
2
4
6
–VGS(off) (V)
V
DS
= 15 V; T
j
= 25
°C;
typical values.
V
DS
= 15 V; T
j
= 25
°C;
typical values.
Fig.2
Drain current as a function of gate-source
cut-off voltage.
Fig.3
Common source transfer admittance as a
function of gate-source cut-off voltage.
April 1995
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBF5484; PMBF5485;
PMBF5486
handbook, halfpage
80
MRC167
2
handbook, halfpage
ID
(mA)
1.5
MRC170
Gos
(
µ
S)
60
VGS = 0 V
40
1
–0.25 V
20
0.5
–0.5 V
0
0
1
2
3
4
5
–VGS(off) (V)
6
0
0
4
8
12
V
(V)
DS
16
V
DS
= 15 V; T
j
= 25
°C;
typical values.
PMBF5484
T
j
= 25
°C.
Fig.4
Common source output conductance as a
function of gate-source cut-off voltage.
Fig.5 Typical output characteristics.
handbook, halfpage
8
MRC171
MRC172
8
handbook, halfpage
V
=0V
GS
ID
(mA)
6
–0.5 V
–1V
VGS = 0 V
ID
(mA)
6
4
–1 V
4
2
–1.5 V
2
–2 V
0
0
0
4
8
12
V
(V)
DS
PMBF5485
T
j
= 25
°C.
16
0
4
8
12
VDS (V)
16
PMBF5486
T
j
= 25
°C.
Fig.6 Typical output characteristics.
Fig.7 Typical output characteristics.
April 1995
5
京公网安备 11010802033920号
EEWORLD
