DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF4416; PMBF4416A
N-channel field-effect transistor
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors
Product specification
N-channel field-effect transistor
FEATURES
•
Low noise
•
Interchangeability of drain and
source connections
•
High gain.
handbook, halfpage
PMBF4416; PMBF4416A
3
d
s
DESCRIPTION
N-channel symmetrical silicon
junction FETs in a surface-mountable
SOT23 envelope. These devices are
intended for use in VHF/UHF
amplifiers, oscillators and mixers.
PINNING - SOT23
PIN
1
2
3
drain
gate
QUICK REFERENCE DATA
SYMBOL
V
DS
PARAMETER
drain-source voltage
PMBF4416
PMBF4416A
I
DSS
P
tot
V
GS(off)
drain-source current
total power
dissipation
gate-source cut-off
voltage
PMBF4416
PMBF4416A
Y
fs
common-source
transfer admittance
V
DS
= 15 V;
V
GS
= 0; f = 1 kHz
V
DS
= 15 V;
V
GS
= 0
−
−
5
30
35
15
250
V
V
mA
mW
CONDITIONS
MIN. MAX. UNIT
DESCRIPTION
source
Fig.1 Simplified outline and symbol.
g
1
Top view
2
MAM385
Marking codes:
PMBF4416: P6A.
PMBF4416A: M16.
up to T
amb
= 25
°C −
V
DS
= 15 V;
I
D
= 1 nA
−
−2.5
4.5
−6
−6
7.5
V
V
mS
April 1995
2
Philips Semiconductors
Product specification
N-channel field-effect transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
PARAMETER
drain-source voltage
PMBF4416
PMBF4416A
V
GSO
gate-source voltage
PMBF4416
PMBF4416A
V
GDO
gate-drain voltage
PMBF4416
PMBF4416A
I
G
P
tot
T
stg
T
j
DC forward gate current
total power dissipation
storage temperature
junction temperature
CONDITIONS
PMBF4416; PMBF4416A
MIN.
−
−
−
−
−
−
−
MAX.
30
35
−30
−35
−30
−35
10
250
+150
150
V
V
V
V
V
V
UNIT
mA
mW
°C
°C
up to T
amb
= 25
°C
(note 1)
−
−65
−
THERMAL RESISTANCE
SYMBOL
R
th j-a
Note
1. Mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)GSS
PMBF4416
PMBF4416A
I
GSS
I
DSS
V
GSS
V
GS(off)
reverse gate leakage current
drain current
gate-source forward voltage
gate-source cut-off voltage
PMBF4416
PMBF4416A
Y
fs
Y
os
common source transfer admittance
common source output admittance
PMBF4416
PMBF4416A
V
DS
= 15 V; V
GS
= 0
V
DS
= 15 V; V
GS
= 0
−
−
50
50
µS
µS
V
DS
= 0; V
GS
=
−15
V
V
DS
= 15 V; V
GS
= 0
V
DS
= 0; I
G
= 1 mA
V
DS
= 15 V; I
D
= 1 nA
−
−2.5
4.5
−6
−6
7.5
V
V
mS
PARAMETER
gate-source breakdown voltage
CONDITIONS
V
DS
= 0; I
G
=
−1 µA
−30
−35
−
5
−
−
−
1
15
1
V
V
nA
mA
V
MIN.
MAX.
UNIT
PARAMETER
from junction to ambient (note 1)
THERMAL RESISTANCE
500 K/W
April 1995
3
Philips Semiconductors
Product specification
N-channel field-effect transistor
DYNAMIC CHARACTERISTICS
T
j
= 25
°C;
V
DS
= 15 V; V
GS
= 0.
SYMBOL
C
is
C
os
C
rs
g
is
g
fs
g
rs
g
os
V
n
PARAMETER
input capacitance
output capacitance
feedback capacitance
common source input conductance
common source transfer conductance
common source feedback conductance
common source output conductance
equivalent input noise voltage
CONDITIONS
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 Hz
PMBF4416; PMBF4416A
MIN.
−
−
−
−
−
−
4
−
−
−
−
−
−
−
−
−
−
TYP.
4
2
MAX.
UNIT
pF
pF
pF
µS
mS
mS
mS
µS
µS
µS
µS
nV/√Hz
0.8
100
1
−
−
−
−
75
100
−
5.2
5
−8
−100
−
−
5
handbook,
25
halfpage
MRC168
MRC169
I DSS
(mA)
handbook,
10
halfpage
Y fs
(mS)
8
20
15
6
10
4
5
2
0
0
2
4
6
–VGS(off) (V)
0
0
2
4
6
–VGS(off) (V)
V
DS
= 15 V; T
j
= 25
°C.
V
DS
= 15 V; T
j
= 25
°C.
Fig.2
Drain current as a function of
gate-source cut-off voltage; typical values.
Fig.3
Common source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
April 1995
4
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
handbook, halfpage
80
MRC167
Gos
(
µ
S)
60
handbook, halfpage
12
MRC163
ID
(mA)
8
VGS = 0 V
40
–0.5 V
4
20
–1V
0
0
1
2
3
4
5
–VGS(off) (V)
V
DS
= 15 V; T
j
= 25
°C.
T
j
= 25
°C.
6
0
0
4
8
12
VDS (V)
16
Fig.4
Common source output conductance as a
function of gate-source cut-off voltage;
typical values.
Fig.5 Typical output characteristics.
handbook,
12
halfpage
MRC164
1
handbook, halfpage
C rs
(pF)
MRC158
ID
(mA)
8
0.8
0.6
0.4
4
0.2
0
–5
–4
–3
–2
–1
0
VGS (V)
0
–10
–8
–6
–4
–2
0
VGS (V)
V
DS
= 15 V; T
j
= 25
°C.
V
DS
= 15 V; T
j
= 25
°C.
Fig.6 Typical input characteristics.
Fig.7 Typical feedback capacitance.
April 1995
5
京公网安备 11010802033920号
EEWORLD
