DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors
Product specification
N-channel junction FETs
FEATURES
•
High-speed switching
•
Interchangeability of drain and
source connections
•
Low R
DSon
at zero gate voltage
(
<
30
Ω
for PMBFJ111).
DESCRIPTION
Symmetrical N-channel junction
FETs in a surface mount SOT23
envelope. Intended for use in
applications such as analog switches,
choppers, commutators, multiplexers
and thin and thick film hybrids.
PINNING - SOT23
PIN
1
2
3
Note
1. Drain and source are
interchangeable.
DESCRIPTION
drain
source
gate
PMBFJ111;
PMBFJ112; PMBFJ113
handbook, halfpage
3
d
s
g
1
Top view
2
MAM385
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain-drain voltage
forward gate current
(DC)
total power dissipation
storage temperature
operating junction
temperature
T
amb
= 25
°C;
note 1
CONDITIONS
MIN.
−
−
−
−
−
−65
−
MAX.
±40
−40
−40
50
300
150
150
UNIT
V
V
V
mA
mW
°C
°C
April 1995
2
Philips Semiconductors
Product specification
N-channel junction FETs
THERMAL CHARACTERISTICS
T
j
=P(R
th j-t
+
R
th t−s
+
R
th s-a
)
+
T
amb
SYMBOL
R
th j-a
R
th j-a
Notes
1. Mounted on a ceramic substrate, 8 mm
×
10 mm
×
0.7 mm.
2. Mounted on printed circuit board.
STATIC CHARACTERISTICS
T
j
= 25
°C.
SYMBOL
−I
GSS
I
DSS
PARAMETER
reverse gate current
drain current
PMBFJ111
PMBFJ112
PMBFJ113
−V
(BR)GSS
−V
GS(off)
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ111
PMBFJ112
PMBFJ113
R
DS(on)
drain-source on-resistance
PMBFJ111
PMBFJ112
PMBFJ113
V
GS
= 0 V; V
DS
= 0.1 V
−I
G
= 1
µA;
V
DS
= 0
I
D
= 1
µA;
V
DS
= 5 V
CONDITIONS
−V
GS
= 15 V; V
DS
= 0
V
GS
= 0; V
DS
= 15 V
PARAMETER
from junction to ambient (note 1)
from junction to ambient (note 2)
MAX.
430
500
UNIT
K/W
K/W
PMBFJ111;
PMBFJ112; PMBFJ113
MIN.
−
20
5
2
40
3
1
0.5
−
−
−
MAX.
UNIT
1 nA
−
mA
−
−
−
V
10 V
5
3
30
Ω
50
100
April 1995
3
Philips Semiconductors
Product specification
N-channel junction FETs
DYNAMIC CHARACTERISTICS
T
j
= 25
°C.
SYMBOL
C
iss
PARAMETER
input capacitance
CONDITIONS
V
DS
= 0
−V
GS
= 10 V
f = 1 MHz
V
DS
= 0
−V
GS
= 0
f = 1 MHz
T
amb
= 25
°C
C
rss
feedback capacitance
V
DS
= 0
−V
GS
= 10 V
f = 1 MHz
PMBFJ111;
PMBFJ112; PMBFJ113
TYP.
6
−
MAX.
UNIT
pF
22
28
pF
3
−
pF
Switching times
(see Fig.2)
t
r
t
on
t
f
t
off
Notes
1. Test conditions for switching times are as follows:
V
DD
= 10 V, V
GS
= 0 to
−V
GS(off)
(all types);
−V
GS(off)
= 12 V, R
L
= 750
Ω
(PMBFJ111);
−V
GS(off)
= 7 V, R
L
= 1550
Ω
(PMBFJ112);
−V
GS(off)
= 5 V, R
L
= 3150
Ω
(PMBFJ113).
rise time
turn-on time
fall time
turn-off time
note 1
note 1
note 1
note 1
6
13
15
35
−
−
−
−
ns
ns
ns
ns
VGS = 0 V
ok, halfpage
10%
VDD
10 nF
50
Ω
10
µF
RL
1
µF
Vi
−V
GS off
90%
toff
ts
90%
Vo
MBK289
DUT
50
Ω
SAMPLING
SCOPE
50
Ω
ton
tf
td
tr
10%
MBK294
Fig.2 Switching circuit.
Fig.3 Input and output waveforms.
April 1995
4
Philips Semiconductors
Product specification
N-channel junction FETs
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBFJ111;
PMBFJ112; PMBFJ113
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
April 1995
5
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