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BLF6G22LS-180PN:11

Description
transistor pwr ldmos sot502b
Categorysemiconductor    Discrete semiconductor   
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
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BLF6G22LS-180PN:11 Overview

transistor pwr ldmos sot502b

BLF6G22LS-180PN:11 Parametric

Parameter NameAttribute value
Datasheets
BLF6G22(LS)-180PN
Product Photos
SOT502B
Standard Package100
CategoryDiscrete Semiconductor Products
FamilyRF FETs
PackagingTape & Reel (TR)
Transistor TypeLDMOS
Frequency2.11GHz ~ 2.17GHz
Gai17.5dB
Voltage - Tes32V
Current Rating-
Noise Figure-
Current - Tes1.6A
Power - Outpu50W
Voltage - Rated65V
Package / CaseSOT-502B
Supplier Device PackageSOT502B
Other Names934064282118

BLF6G22LS-180PN:11 Related Products

BLF6G22LS-180PN:11 934061276112 934061276135
Description transistor pwr ldmos sot502b 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4
Maker - NXP NXP
package instruction - FLANGE MOUNT, R-CDFM-F4 FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code - unknown unknown
ECCN code - EAR99 EAR99
Shell connection - SOURCE SOURCE
Configuration - COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage - 65 V 65 V
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band - S BAND S BAND
JESD-30 code - R-CDFM-F4 R-CDFM-F4
Number of components - 2 2
Number of terminals - 4 4
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - N-CHANNEL N-CHANNEL
surface mount - YES YES
Terminal form - FLAT FLAT
Terminal location - DUAL DUAL
transistor applications - AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON
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