provided by an active LOW chip enable (CE) and active LOW
output enable (OE) and three-state drivers. This device has an
automatic power-down feature, reducing the power consump-
tion by 81% when deselected. The CY7C199 is in the standard
300-mil-wide DIP, SOJ, and LCC packages.
An active LOW write enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O
0
through I/O
7
) is written into the memory location addressed by
the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Functional Description
The CY7C199 is a high-performance CMOS static RAM orga-
nized as 32,768 words by 8 bits. Easy memory expansion is
Logic Block Diagram
Pin Configurations
DIP / SOJ / SOIC
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
22
23
24
25
26
27
28
1
2
3
4
5
6
7
LCC
Top View
A7
A6
A5
VCC
WE
A
8
A
9
A
10
A
11
A
12
A
13
A
14
I/O
0
I/O
1
C199–2
I/O2
GND
I/O3
I/O4
I/O5
3 2 1 28 27
4
26 A
4
5
25 A
3
6
24 A
2
7
23 A
1
8
22 OE
9
21 A
0
10
20 CE
11
19 I/O
7
12
18 I/O
6
1314151617
C199–3
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
CE
WE
OE
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
1024 x 32 x 8
ARRAY
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
3
I/O
4
I/O
5
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
TSOP I
Top View
(not to scale)
A
10
A
11
A
12
A
13
A
14
C199–1
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A
0
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
14
A
13
A
12
C199–4
Selection Guide
7C199-8
Maximum Access Time (ns)
Maximum Operating
Current (mA)
L
Maximum CMOS
Standby Current (mA)
L
8
120
0.5
7C199-10
10
110
90
0.5
0.05
7C199-12
12
160
90
10
0.05
7C199-15
15
155
90
10
0.05
7C199-20
20
150
90
10
0.05
7C199-25
25
150
80
10
0.05
7C199-35
35
140
70
10
0.05
7C199-45
45
140
10
Shaded area contains preliminary information.
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
• CA 95134 •
408-943-2600
February 1988 – Revised April 22, 1998
CY7C199
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................. –55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[1]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
.................................–0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Military
Ambient Temperature
[2]
0
°
C to +70
°
C
–40
°
C to +85
°
C
–55
°
C to +125
°
C
V
CC
5V
±
10%
5V
±
10%
5V
±
10%
Electrical Characteristics
Over the Operating Range
[3]
7C199-8
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Load
Current
Output Leakage
Current
V
CC
Operating
Supply Current
GND < V
I
< V
CC
GND < V
O
< V
CC
,
Output Disabled
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Com’l
L
Mil
5
5
5
0.5
0.05
0.5
0.05
30
5
10
0.05
Test Conditions
V
CC
=Min., I
OH
=–4.0 mA
V
CC
=Min., I
OL
=8.0 mA
2.2
–0.5
–5
–5
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
120
2.2
–0.5
–5
–5
Max.
7C199-10
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
110
85
2.2
–0.5
–5
–5
Max.
7C199-12
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
160
85
2.2
–0.5
–5
–5
Max.
7C199-15
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
155
100
180
30
5
10
0.05
15
Max.
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
I
SB1
Automatic CE
Power-Down
Current— TTL
Inputs
Automatic CE
Power-Down
Current— CMOS
Inputs
Max. V
CC
, CE >
Com’l
V
IH
,
L
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
Com’l
CE > V
CC
– 0.3V L
V
IN
> V
CC
– 0.3V
or V
IN
< 0.3V, f = 0 Mil
I
SB2
Shaded area contains preliminary information.
Notes:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
2
CY7C199
Electrical Characteristics
Over the Operating Range
[3]
(continued)
7C199-20
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Load
Current
Output Leakage
Current
V
CC
Operating
Supply Current
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Com’l
L
Mil
Test Conditions
V
CC
=Min., I
OH
=–4.0 mA
V
CC
=Min., I
OL
=8.0 mA
2.2
–0.5
–5
–5
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
150
90
170
30
5
10
0.05
15
2.2
-0.5
–5
–5
Max.
7C199-25
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
150
80
150
30
5
10
0.05
15
2.2
-0.5
–5
–5
Max.
7C199-35
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
140
70
150
25
5
10
0.05
15
2.2
-0.5
–5
–5
Max.
7C199-45
Min.
2.4
0.4
V
CC
+0.3V
0.8
+5
+5
140
70
150
25
5
10
0.05
15
Max.
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
µA
mA
I
SB1
Automatic CE
Power-Down
Current—
TTL Inputs
Automatic CE
Power-Down
Current—
CMOS Inputs
Max. V
CC
, CE > V
IH
, Com’l
V
IN
> V
IH
L
or V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
Com’l
CE > V
CC
– 0.3V
L
V
IN
> V
CC
– 0.3V or
V
IN
< 0.3V, f=0
Mil
I
SB2
]
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
8
Unit
pF
pF
3
CY7C199
AC Test Loads and Waveforms
[5]
R1 481Ω
5V
OUTPUT
30 pF
INCLUDING
JIGAND
SCOPE
R2
255
Ω
5V
OUTPUT
5 pF
INCLUDING
JIGAND
SCOPE
R2
255Ω
3.0V
10%
GND
≤t
r
R1 481Ω
ALL INPUT PULSES
90%
90%
10%
≤t
r
C199–6
C199–5
(a)
(b)
Equivalent to:
THÉVENIN EQUIVALENT
167
Ω
1.73V
OUTPUT
Data Retention Characteristics
Over the Operating Range (L version only)
Parameter
V
DR
I
CCDR
t
CDR[4]
t
R[5]
Description
V
CC
for Data Retention
V
CC
= V
DR
= 2.0V,
CE > V
CC
– 0.3V,
Com’l L
V
IN
> V
CC
– 0.3V or
Chip Deselect to Data Retention Time V
IN
< 0.3V
Operation Recovery Time
Data Retention Current
Com’l
Conditions
[6]
Min.
2.0
Max.
Unit
V
µA
10
0
t
RC
µA
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
3.0V
t
CDR
CE
C199–7
V
DR
> 2V
3.0V
t
R
Notes:
4. Tested initially and after any design or process changes that may affect these parameters.
5. t
R
< 3 ns for the -12 and -15 speeds. t
R
< 5 ns for the -20 and slower speeds.
6. No input may exceed V
CC
+ 0.5V.
4
CY7C199
Switching Characteristics
Over the Operating Range
[3, 7]
7C199-8
Parameter
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
[8]
OE HIGH to High Z
[8, 9]
CE LOW to Low Z
[8]
CE HIGH to High Z
[8,9]
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
[9]
WE HIGH to Low Z
[8]
3
8
7
7
0
0
7
5
0
5
3
0
8
10
7
7
0
0
7
5
0
6
3
3
4
0
10
12
9
9
0
0
8
8
0
7
3
0
5
3
5
0
12
15
10
10
0
0
9
9
0
7
3
8
4.5
0
5
3
5
0
15
8
8
3
10
5
0
5
3
7
10
10
3
12
5
0
7
12
12
3
15
7
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
Max.
7C199-10
Min.
Max.
7C199-12
Min.
Max.
7C199-15
Min.
Max.
Unit
WRITE CYCLE
[10, 11]
Shaded area contains preliminary information.
Notes:
7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,
input pulse levels of 0 to 3.0V, and output loading of the specified I
OL
/I
OH
and 30-pF load capacitance.
8. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
9. t
HZOE
, t
HZCE
, and t
HZWE
are specified with C
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured
±500
mV from steady-state voltage.
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
[color=#000]In my design, I connected an LED to the multiplexed pin of [/color][color=rgb(205, 23, 31)][url=http://www.ti.com.cn/product/cn/TMS320C6455]TMS320C6455[/url][/color][color=#000], as shown ...
The first part of this article details the key technologies of Bluetooth radio frequency, baseband and protocol. The content covers Bluetooth modulation, data packet composition, frequency hopping seq...
[p=30, null, left][font=宋体][font=Verdana][color=#a0522d]Switching power supplies are of various types and their design methods are also complex and diverse. Therefore, it is necessary to study a simpl...
Summary after work, for discussion 1. When connecting more than 3 points, try to let the line pass through each point in turn to facilitate testing, and keep the line as short as possible. 2. Try not ...
1. Several nouns
ABI:
The specifications that an executable file must follow in order to run in a specific execution environment;
Separately generated relocatabl...[Details]
PV DC fuses are safety devices used to protect PV panels, inverters, and DC loads. To ensure their safety and reliability, they must be UL248 certified.
Before applying for UL248 certifi...[Details]
1. Equipment Overview
Shell-and-tube heat exchangers are a common heat exchange device used in chemical evaporation and heating equipment. Currently, the tubesheets of shell-and-tube heat exch...[Details]
Electric vehicles are currently gaining momentum, but this is just a facade. Fuel-powered vehicles remain unchallenged. While electric vehicles boast unique advantages in environmental emissions an...[Details]
Whether it is an electric car or an ordinary fuel car, for the vast majority of car buyers, the final cost of use is what they care about most. For fuel cars, how to save fuel is what drivers care ...[Details]
In recent years, the government has increasingly supported electric vehicles, and the number of electric vehicles has increased. Observant drivers will notice that there are many more green license...[Details]
Robotics
has become
LiDAR
's "second growth curve."
While LiDAR was still battling with its "pure vision" rivals in the automotive field, another field ignited the demand f...[Details]
With the rapid advancement of automation technology, collaboration between robots is no longer just science fiction. Imagine dozens of machines moving goods in a warehouse without interfering with ...[Details]
The all-new MG4 was recently officially announced on the Ministry of Industry and Information Technology's (MIIT) new vehicle announcement. The all-new MG4's semi-solid-state battery version addres...[Details]
Since its invention in the mid-1940s, the microwave oven has evolved from a humble beginning to commercial use, entering homes in the 1960s and rapidly gaining popularity. Its basic functionality a...[Details]
Electric vehicles are now widespread, but they've brought with them a host of problems, the most prominent of which is charging. Small electric vehicles (EVs) are a new form of transportation in a ...[Details]
Permanent magnets are essential components in a wide range of household and industrial devices. They are particularly crucial in the renewable energy sector, including electric vehicle motors. Curr...[Details]
Electric vehicles are powered by electricity, and charging is a device that supplements the vehicle's energy source. It is common to need to recharge the vehicle when driving. But can you charge th...[Details]
In daily life, power transformers have different functions and uses due to different usage scenarios. The most common ones can be divided into: control transformers, isolation transformers, rectifi...[Details]
Compared to cloud databases, minicomputers are purpose-built for decentralized, rugged computing at the edge of the network. By moving applications, analytics, and processing services closer to the...[Details]
Power technology
京公网安备 11010802033920号
EEWORLD
