MITSUBISHI INTELLIGENT POWER MODULES
PM50CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
PM50CTK060
¡600V,
50A Current-sense 6kHz IGBT
type inverter
¡Built
in IGBT gate drive circuit
¡Built
in Faule OC, SC, OT & UV protection
Fault output
¡3.7kW
class inverter application
APPLICATION
Air conditioner, mortor control
OUTLINE DRAWING
Dimensions in mm
A · B: TERMINAL NAME
1.
2.
3.
4.
5.
6.
7.
8.
9.
V
UPC
NC
U
P
V
UP1
V
VPC
NC
V
P
V
VP1
V
WPC
10.
11.
12.
13.
14.
15.
16.
17.
18.
NC
W
P
V
WP1
V
NC
V
N1
NC
U
N
V
N
W
N
19.
20.
21.
22.
23.
24.
25.
F
O
P
NC
N
U
V
W
100.5
±1
88.5
±0.5
60.96
±0.8
0.75
15 - 2.54
±0.25
(13.77)
7.62
7.62
7.62
1 2 3 4
5 6 7 8
9 10 11 12
13 14 15 16 17 18 19
4 - R5
58.5
±0.8
56.5
±0.5
70
±1
41
20
21
22
23
24
25
4 -
φ4.5
(13)
12.5
±0.25
12.5
±0.25
12.5
±0.25
12.5
±0.25
12.5
±0.25
33
(1)
6.35
C1
0.6
B
A
7.95
(t = 0.4)
3.4
19
±1
13.5
10
LABEL
5.5
φ1.65
6
A: DETAIL
(t = 0.8)
B: DETAIL
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM50CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
EQUIVALENT CIRCUIT DIAGRAM
W
P
V
WP1
V
P
V
VP1
U
P
V
UP1
V
WPC
NC
V
VPC
NC
V
UPC
NC
9 11 10 12
5 7 6
8
1 3 2
4
F
O
NC
19 15
R
fo
V
NC
W
N
13 18
V
N1
14
V
N
17
U
N
16
GND In F
O
V
CC
TEMP
GND Si
Out
Th
GND In F
O
V
CC
GND In F
O
V
CC
GND In
V
CC
GND In
V
CC
GND In
V
CC
GND Si
Out
GND Si
Out
GND Si
Out
GND Si
Out
GND Si
Out
21
NC
22
N
25
W
24
V
23
U
20
P
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Collector-emitter voltage
Collector current
Collector current (peak)
Collector dissipation
Junction temperature
Conditions
V
D
= 15V, I
CIN
= 10mA
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Ratings
600
50
100
100
–20 ~ +150
Unit
V
A
A
W
°C
CONTROL PART
Symbol
V
D
I
CIN
V
FO
I
FO
Parameter
Supply voltage
Input current
Fault output supply voltage
Fault output current
Conditions
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC,
W
P
-V
WPC
,
U
N
· V
N
· W
N
-V
NC
Applied between : F
O
-V
NC
Sink current of F
O
terminal
Ratings
20
20
20
20
Unit
V
mA
V
mA
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM50CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Parameter
Supply voltage protected
V
CC(PROT)
by OC & SC
V
CC
Supply voltage
V
CC(surge)
Supply voltage (surge)
T
C
Module case operating temperature
T
stg
Storage temperature
V
iso
Isolation voltage
Note 1 : T
C
measuring point is as shown below.
Symbol
Conditions
V
D
= 13.5 ~ 16.5V,
Inverter part, T
j
= 125°C start
Applied between : P-N, operating time
Applied between : P-N, surge and non-operating time
(Note 1)
60Hz, sinusoidal, AC · 1 min
Ratings
400
450
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
V
V
°C
°C
V
rms
T
C
ELECTRICAL CHARACTERISTICS
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-emitter
saturation voltage
FWDi forward voltage
(Tj = 25°C, unless otherwise noted)
Test conditions
V
D
= 15V, I
CIN
= 10mA
I
C
= 50A, T
j
= 25°C
I
C
= 50A, T
j
= 125°C
–I
C
= 50A, V
D
= 15V, I
CIN
= 0mA
Switching time
V
D
= 15V, I
CIN
= 0mA↔10mA
V
CC
= 300V, I
C
= 50A
T
j
= 125°C
(Per 1 arm) Inductive Load
V
CE
= V
CES
, I
CIN
= 0mA
T
j
= 25°C
T
j
= 125°C
Collector-emitter
cutoff current
Min.
—
—
—
0.6
—
—
—
—
—
—
Limits
Typ.
1.8
1.85
2.2
1.2
0.15
0.5
2.8
0.6
—
—
Max.
2.7
2.78
3.3
2.4
0.3
1.1
3.6
1.2
1
10
Unit
V
V
µs
µs
µs
µs
µs
mA
CONTROL PART
Symbol
I
D
I
th(ON)
I
th(OFF)
OC
SC
t
off(OC)
OT
OT
r
UV
UV
r
I
FO(H)
I
FO(L)
t
FO
Note 2 : Fault
Fault
Fault
Fault
Parameter
Circuit current
Input on threshold current
Input off threshold current
Over current trip level
Short circuit trip level
Over current delay time
Over temperature protection
Supply circuit under
voltage protection
Fault output current
Test conditions
V
N1
-V
NC
V
XP1
-V
XPC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
· V
N
· W
N
-V
NC
–20°C
≤
T
j
≤
125°C, V
D
= 15V
–20°C
≤
T
j
≤
125°C, V
D
= 15V
V
D
= 15V
Base-plate
Trip level
Temperature detection, V
D
= 15V
Reset level
Trip level
–20°C
≤
T
j
≤
125°C
Reset level
V
D
= 15V, I
CIN
= 0mA
(Note 2) V
D
= 15V, V
FO
= 15V
V
D
= 15V
Min.
—
—
1
1
65
—
—
100
—
11.5
—
—
—
1.0
Limits
Typ.
40
13
3
3
88
132
10
110
90
12.0
12.5
—
10
1.8
Max.
55
18
5
5
—
—
—
120
—
12.5
—
0.01
15
—
Unit
mA
mA
mA
A
A
µs
°C
°C
V
V
mA
mA
ms
Minimum fault output pulse
width
(Note 2)
output
output
output
output
is given only when the internal OC, SC, OT & UV protection.
of OC, SC protection operate by lower arm.
of OC, SC protection given pulse.
of OT, UV protection given pulse while over level. (OT is only N side)
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM50CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
THERMAL RESISTANCES
Symbol
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Parameter
Junction to case
thermal resistances
Contact thermal resistance
Test conditions
Inverter IGBT part, per 1/6 module
Inverter FWDi part, per 1/6 module
Case to fin, thermal grease applied, per 1/6 module
Min.
—
—
—
Limits
Tye.
—
—
—
Max.
1.25
3.0
0.23
Unit
°C
/ W
°C
/ W
°C
/ W
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
—
—
Parameter
Mounting torque
Weight
Test conditions
Mounting screw : M4
Min.
0.98
10
—
Limits
Tye.
1.18
12
150
Max.
1.47
15
—
Unit
N·m
kg·cm
g
RECOMMENDED CONDITIONS FOR USE
Symbol
V
CC
V
D
I
CIN(ON)
I
CIN(OFF)
f
PWM
t
dead
Input on current
Input off current
PWM input frequency
Arm shoot-through blocking time
Parameter
Supply voltage
Test conditions
Applied between : P-N
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1-
V
NC
Applied between : U
P
, V
P
, W
P
, U
N
, V
N
, W
N
Using application circuit Opto-coupler’s input signal
Using application circuit Opto-coupler’s input signal
Ratings
≤
400
(Note 3)
15
±
1.5
≥
5
≤
1
≤
8
≥
3
Unit
V
V
mA
mA
kHz
µs
Note 3 : Permissible ripple value : dv/dt
≤ ±5V/µs,
Vripple
≤
2V
P-P
Aug.1999
MITSUBISHI INTELLIGNET POWER MODULES
PM50CTK060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
60
COLLECTOR CURRENT I
C
(A)
50
40
30
20
10
0
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
T
j
= 25°C
I
CIN
= 10mA V
D
= 17V 15V 13V
2.0
V
D
= 15V
I
CIN
= 10mA
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
1.0
T
j
= 25°C
T
j
= 125°C
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
2.5
3.0
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VS. SUPPLY VOLTAGE
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
2.2
10
1
SWITCHING TIME VS.
COLLECTOR CURRENT
(TYPICAL)
7
V
CC
= 300V
5
4
V
D
= 15V
3
INDUCTIVE LOAD
2
T
j
= 125°C
SWITCHING TIMES (µs)
1.8
t
off
t
on
t
c(off)
t
c(on)
1.4
10
0
7
5
4
3
2
1.0
I
C
= 50A
I
CIN
= 10mA
T
j
= 25°C
T
j
= 125°C
12
14
16
18
20
0.6
0.2
10
–1 0
10
2
3 4 5 7
10
1
2
3 4 5 7
10
2
SUPPLY VOLTAGE V
D
(V)
COLLECTOR CURRENT I
C
(A)
I
C
(A)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS
(TYPICAL)
10
2
7
5
4
3
2
COLLECTOR REVERSE CURRENT
V
D
= 15V
I
CIN
= 0mA
T
j
= 25°C
T
j
= 125°C
2
2
10
1
7
5
4
3
2
10
–1
7
5
4
3
2
t
rr
10
1
7
5
4
3
2
3 4 5 7
10
1
3 4 5 7
10
2
10
0
0
0.5
1.0
1.5
2.0
2.5
10
–2 0
10
10
0
2
2
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
COLLECTOR REVERSE CURRENT
I
C
(A)
Aug.1999
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY TIME t
rr
(µs)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
2
10
0
T
j
= 125°C
7
7
V
CC
= 300V
5
5
4
4
V
D
= 15V
INDUCTIVE LOAD
I
rr
3
3
Embedded System
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