MITSUBISHI <INTELLIGENT POWER MODULES>
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
PM200RSE060
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED PACKAGE
INSULATED PACKAGE
PM200RSE060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical V
CE
(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 200A, 600V Current-sense IGBT for 15kHz switching
• 75A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 22kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
135
±1
120.5
±0.5
0.5
±0.3
39.7
LABEL
4-
φ5.5
MOUNTING
HOLES
24.1
Terminal code
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
V
UPC
U
P
V
UP1
V
VPC
V
P
V
VP1
V
WPC
W
P
V
WP1
V
NC
11.
12.
13.
14.
15.
16.
V
N1
B
r
U
N
V
N
W
N
F
O
16.5
1 23
456
789
3.22
10.16
10.16
10.16
20
39.5
10.5
φ2.54
U
51.5
A
2-φ2.54
V
26
16-
95.5
±0.5
110
±1
2-2.54 2-2.54 2-2.54 6-2.54
67.4
74.4
20
11
11 13 15
10 12 14 16
13
W
3.22
4-R6
6-M5 NUTS
2-2.54
0.64
26
0.64
11.6
33.7
34.7
24.1
–0.5
4
+1.0
21.3
A : DETAIL
10.6
Screwing depth
Min9.0
5
P
N
B PPS
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo=1.5kΩ
W
P
Br
Fo
V
NC
W
N
V
N1
V
N
U
N
V
WPC
V
WP1
V
VPC
V
P
V
VP1
V
UPC
U
P
V
UP1
Rfo
Gnd In
Fo Vcc
Gnd In
Fo Vcc Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Vcc
Gnd In
Vcc Gnd In
Vcc
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Gnd
Si Out
Th
B
N
W
V
U
P
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
V
D
= 15V, V
CIN
= 15V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Ratings
600
200
400
595
–20 ~ +150
Unit
V
A
A
W
°C
BRAKE PART
Symbol
V
CES
I
C
I
CP
P
C
V
R(DC)
I
F
T
j
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Rated DC Reverse Voltage
FWDi Forward Current
Junction Temperature
Condition
V
D
= 15V, V
CIN
= 15V
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Ratings
600
75
150
312
600
75
–20 ~ +150
Unit
V
A
A
W
V
A
°C
CONTROL PART
Symbol
V
D
V
CIN
V
FO
I
FO
Parameter
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Condition
Applied between : V
UP1
-V
UPC
V
VP1
-V
VPC
, V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
W
P
-V
WPC
, U
N
• V
N
• W
N
• B
r
-V
NC
Applied between : F
O
-V
NC
Sink current at F
O
terminal
Ratings
20
20
20
20
Unit
V
V
V
mA
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Parameter
Supply Voltage Protected by
V
CC(PROT)
OC & SC
V
CC(surge)
Supply Voltage (Surge)
Module Case Operating
T
C
Temperature
Storage Temperature
T
stg
V
iso
Isolation Voltage
Symbol
Condition
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= 125°C Start
Applied between : P-N, Surge value or without switching
(Note-1)
Ratings
400
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
V
°C
°C
V
rms
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
Tc
THERMAL RESISTANCES
Symbol
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c’)Q
R
th(j-c’)F
R
th(j-c’)Q
R
th(j-c’)F
R
th(c-f)
Parameter
Test Condition
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part, (Note-1)
Brake FWDi part, (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part, (Note-2)
Brake FWDi part, (Note-2)
Case to fin, Thermal grease applied (per 1 module)
Min.
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
Max.
0.21
0.35
0.40
1.10
0.13
0.21
0.27
0.47
0.018
Unit
Junction to case Thermal
Resistances
Contact Thermal Resistance
(Note-2) T
C
measurement point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Test Condition
V
D
= 15V, I
C
= 200A
(Fig. 1)
V
CIN
= 0V, Pulsed
–I
C
= 200A, V
D
= 15V, V
CIN
= 15V
V
D
= 15V, V
CIN
= 15V↔0V
V
CC
= 300V, I
C
= 200A
T
j
= 125°C
Inductive Load (upper and lower arm)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 4)
T
j
= 25°C
T
j
= 125°C
(Fig. 2)
Min.
—
—
—
0.4
—
—
—
—
—
—
Limits
Typ.
1.7
1.7
2.2
0.8
0.15
0.4
2.4
0.6
—
—
Max.
2.3
2.3
3.3
2.0
0.3
1.0
2.9
1.2
1
10
Unit
V
V
Switching Time
Collector-Emitter
Cutoff Current
P
N
B
63mm
U
V
W
°C/W
µs
(Fig. 3)
T
j
= 25°C
T
j
= 125°C
mA
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
BRAKE PART
Symbol
V
CE(sat)
V
FM
I
CES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
V
D
= 15V, I
C
= 75A
V
CIN
= 0V, Pulsed
I
F
= 75A
V
CE
= V
CES
, V
CIN
= 15V
Test Condition
T
j
= 25°C
T
j
= 125°C
(Fig. 2)
T
j
= 25°C
T
j
= 125°C
Min.
—
—
—
—
—
Limits
Typ.
2.35
2.55
2.2
—
—
Max.
2.80
3.05
3.3
1
10
Unit
V
V
mA
(Fig. 1)
(Fig. 4)
CONTROL PART
Symbol
I
D
V
th(ON)
V
th(OFF)
Parameter
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Test Condition
V
D
= 15V, V
CIN
= 15V
V
N1
-V
NC
V
XP1
-V
XPC
Min.
—
—
1.2
1.7
—
518
310
115
—
—
—
111
—
11.5
—
—
—
1.0
Limits
Typ.
52
13
1.5
2.0
—
609
—
161
560
241
10
118
100
12.0
12.5
—
10
1.8
Max.
72
18
1.8
2.3
1010
850
—
—
—
—
—
125
—
12.5
—
0.01
15
—
A
µs
°C
V
mA
ms
Unit
mA
V
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
• B
r
-V
NC
Inverter part
V
D
= 15V
T
j
= –20°C
T
j
= 25°C
T
j
= 125°C
(Fig. 5,6)
Inverter part
Brake part
(Fig. 5,6)
Trip level
Reset level
Trip level
Reset level
(Note-3)
(Note-3)
(Fig. 5,6)
OC
Over Current Trip Level
Break part
–20
≤
T
j
≤
125°C, V
D
= 15V
A
SC
t
off(OC)
OT
OT
r
UV
UV
r
I
FO(H)
I
FO(L)
t
FO
Short Circuit Trip Level
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
output
output
output
output
–20≤ T
j
≤
125°C, V
D
= 15V
(Fig. 5,6)
V
D
= 15V
Base-plate
Temperature detection, V
D
= 15V
–20
≤
T
j
≤
125°C
V
D
= 15V, V
FO
= 15V
V
D
= 15V
(Note-3) Fault
Fault
Fault
Fault
is given only when the internal OC, SC, OT & UV protection.
of OT protection operate by lower arm.
of OC, SC protection given pulse.
of OT, UV protection given pulse while over level.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
—
—
—
Parameter
Mounting torque
Mounting torque
Weight
Main terminal
Mounting part
—
Test Condition
screw : M5
screw : M5
Min.
2.5
2.5
—
Limits
Typ.
3.0
3.0
920
Max.
3.5
3.5
—
Unit
N•m
N•m
g
RECOMMENDED CONDITIONS FOR USE
Symbol
V
CC
V
D
V
CIN(ON)
V
CIN(OFF)
f
PWM
t
dead
Parameter
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
Test Condition
Applied across P-N terminals
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
(Note-4)
Applied between : U
P
-V
UPC
, V
P
-V
VPC
, W
P
-V
WPC
U
N
• V
N
• W
N
• B
r
-V
NC
Using Application Circuit input signal of IPM, 3φ
sinusoidal PWM VVVF inverter
(Fig. 8)
For IPM’s each input signals
(Fig. 7)
Recommended value
≤
400
15
±
1.5
≤
0.8
≥
4.0
≤
20
≥
2.5
Unit
V
V
V
kHz
µs
(Note-4) Allowable Ripple rating of Control Voltage : dv/dt
≤ ±5V/µs,
2V
p-p
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM200RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (V
D
), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not
be allowed to rise above V
CES
rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
IN
(Fo)
IN
(Fo)
P, (U,V,W)
V
CIN
(0V)
V
Ic
V
CIN
(15V)
V
–
Ic
V
D
(all)
U,V,W, (N)
V
D
(all)
U,V,W,B, (N)
Fig. 1 V
CE(sat)
Test
Fig. 2 V
EC
, (V
FM
) Test
a) Lower Arm Switching
P
V
CIN
(15V)
V
CIN
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Fo
trr
U,V,W
Irr
C
S
V
CE
Ic
90%
Vcc
90%
N
b) Upper Arm Switching
V
CIN
Signal input
(Upper Arm)
Signal input
(Lower Arm)
V
D
(all)
P
Ic
10%
10%
tc (on)
10%
tc (off)
10%
U,V,W
V
CIN
C
S
Vcc
td (on)
tr
td (off)
tf
V
CIN
(15V)
Fo
(ton= td (on) + tr)
N
(toff= td (off) + tf)
V
D
(all)
Ic
Fig. 3 Switching time Test circuit and waveform
P, (U,V,W,B)
A
IN
(Fo)
V
CIN
Pulse
V
CE
V
CIN
(15V)
Over Current
V
D
(all)
U,V,W, (N)
I
C
t
off (OC)
Constant Current
OC
Fig. 4 I
CES
Test
P, (U,V,W,B)
IN
(Fo)
Short Circuit Current
V
CC
I
C
Constant Current
SC
V
CIN
V
D
(all)
U,V,W, (N)
I
C
Fig. 5 OC and SC Test
Fig. 6 OC and SC Test waveform
P
V
D
V
CINP
U,V,W
Vcc
V
D
V
CINN
N
Ic
V
CINP
0V
V
CINN
0V
t
t
t
dead
t
dead
t
dead
Fig. 7 Dead time measurement point example
Sep. 2001
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