V826616B24SAIW-B1 datasheet, PDF

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V826616B24SAIW-B1: DescriptionCache DRAM Module, 16MX64, 0.75ns, CMOS, PDMA200; Categorystorage storage; File Size197KB，14 Pages; ManufacturerProMOS Technologies Inc

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V826616B24SAIW-B1 Overview

Cache DRAM Module, 16MX64, 0.75ns, CMOS, PDMA200

V826616B24SAIW-B1 Parametric

Parameter Name	Attribute value
Objectid	1126060245
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
YTEOL	2
Maximum access time	0.75 ns
Maximum clock frequency (fCLK)	143 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N200
memory density	1073741824 bit
Memory IC Type	CACHE DRAM MODULE
memory width	64
Number of terminals	200
word count	16777216 words
character code	16000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.08 A
Maximum slew rate	1.21 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL

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V826616B24SA

128 MB 200-PIN DDR UNBUFFERED

SODIMM 16M x 64

Features

■

JEDEC 200 Pin DDR Unbuffered Small-Outline,

Dual In-Line memory module (SODIMM);

16,777,216 x 64 bit organization.

■

Utilizes High Performance 16M x 16 DDR

SDRAM in TSOPII-66 Packages

■

Single +2.5V (± 0.2V) Power Supply

■

Single +2.6V (± 0.1V) Power Supply for DDR400

■

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

■

Auto Refresh (CBR) and Self Refresh

■

All Inputs, Outputs are SSTL-2 Compatible

■

8192 Refresh Cycles every 64 ms

■

Serial Presence Detect (SPD)

■

DDR SDRAM Performance

Component Used -6

Module Speed

-7

-75

-8

Description

The V826616B24SA memory module is

organized 16,777,216 x 64 bits in a 200 pin memory

module. The 16M x 64 memory module uses 4

ProMOS 16M x 16 DDR SDRAM. The x64 modules

are ideal for use in high performance computer

systems where increased memory density and fast

access times are required.

Clock Frequency

166

143

133

125

(PC333)

Clock

200

(max.) Frequency (max.)

(PC266A) (PC266B) (PC200)

(PC400A)

166

(PC333)

143

(PC266A)

133

(PC266B)

Units

MHz

CLK

200

(PC400B)

Clock Access Time

Clock Cycle 2.5

CAS Latency = Time CAS Latency = 2

Clock Cycle Time CAS Latency = 2.5

Clock Cycle Time CAS Latency = 3

7.5

RCD

tRCD parameter

tRP parameter

V826616B24SA Rev. 1.3 April 2006

Recommended Resources

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