DISCRETE SEMICONDUCTORS
DATA SHEET
PLB16012U
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Input matching cell allows an easier
design of circuits
•
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
•
Interdigitated structure provides
high emitter efficiency
•
Gold metallization realizes very
stable characteristics and excellent
lifetime
•
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common base, class C, power
amplifiers at 1.6 GHz. Also suitable
for operation in the 1.4 to 1.8 GHz
range.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package with base connected
to flange.
2
Top view
PLB16012U
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common base class C
narrowband amplifier.
MODE OF
OPERATION
Class C (CW)
f
(GHz)
1.6
V
CC
(V)
28
P
L
(W)
10
G
p
(dB)
>8
η
C
(%)
>45
Z
i
; Z
L
(Ω)
see Figs 5
and 6
PINNING - SOT437A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
handbook, 4 columns
1
c
b
3
e
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.3 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
t
≤
10 s; note 1
T
mb
= 75
°C
CONDITIONS
open emitter
open base
R
BE
= 0
Ω
open collector
−
−
−
−
−
−
−65
−
−
PLB16012U
MIN.
MAX.
45
15
40
3
0.9
15
+150
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
MGA242
handbook,
20
halfpage
MGA241
handbook,
15
halfpage
Ptot
(W)
15
PL
(W)
10
10
5
5
0
−50
0
50
100
150
200
250
o
C)
Tmb (
0
0
0.5
1.0
1.5
PIN (W)
2.0
P
tot max
= 15 W.
V
CC
= 28 V; f = 1.6 GHz.
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
Fig.3 Load power as a function of source power.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. See
“Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
CONDITIONS
V
CB
= 28 V; I
E
= 0
V
CB
= 35 V; I
E
= 0
V
CE
= 28 V; R
BE
= 0
Ω
V
EB
= 1.5 V; I
C
= 0
PARAMETER
thermal resistance from junction to mounting base
CONDITIONS
T
j
= 100
°C
PLB16012U
MAX.
6
0.3
UNIT
K/W
K/W
thermal resistance from mounting base to heatsink note 1
MAX.
0.3
0.6
0.6
25
UNIT
mA
mA
mA
µA
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
in a common base test circuit as shown in Fig.4 and working in CW
class C mode.
MODE OF
OPERATION
Class C (CW)
note 1
Class C - 100 ms 50%
Note
1. May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below
1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit.
List of components
(see Fig.4)
COMPONENT
L1, L2
C1
C2
C3
C4
DESCRIPTION
5 turns 0.2 mm diameter copper wire
DC blocking capacitor
feedthrough bypass capacitor
trimmer capacitor
electrolytic capacitor
0.6 - 4.5 pF
150
µF,
45 V
100 pF
Erie, ref.1250-003
AT-3-7-271SL
VALUE
DIMENSIONS
int. dia. = 2 mm
CATALOGUE NO.
f
(GHz)
1.6
1.6
V
CC
(V)
28
28
P
L
(W)
10
typ. 15
G
p
(dB)
≥8
typ. 9.4
typ. 9.4
η
C
(%)
≥45
typ. 60
typ. 60
Z
i
; Z
L
(Ω)
see Figs 5 and 6
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16012U
handbook, full pagewidth
30 mm
30 mm
7.5
15.5
3
5
5
1.5
5
5
3
1
22
8
40 mm
1.2
5
10
5
8.5
40 mm
1.2
MCD616
handbook, full pagewidth
VCC
C4
VCC
C2
input
L1
L2
C1
output
C3
MCD617
Substrate: Teflon fibre glass.
Thickness: 0.4 mm.
Permittivity:
ε
r
= 2.55.
Fig.4 Narrowband test circuit.
1997 Feb 18
5
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