IM820E-1FUZS-110.0000MHZ datasheet, PDF

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IM820E-1FUZS-110.0000MHZ: DescriptionXO, Clock,; CategoryPassive components oscillator; File Size788KB，9 Pages; ManufacturerILSI; Websitehttp://www.ilsiamerica.com; Environmental Compliance

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IM820E-1FUZS-110.0000MHZ Overview

XO, Clock,

IM820E-1FUZS-110.0000MHZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	145148595540
Reach Compliance Code	compliant
Other features	ALSO COMPATIBLE WITH HCMOS O/P; STANDBY; ENABLE/DISABLE FUNCTION; TR, 7 INCH
maximum descent time	2.5 ns
Frequency Adjustment - Mechanical	NO
frequency stability	30%
JESD-609 code	e4
Installation features	SURFACE MOUNT
Nominal operating frequency	110 MHz
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Oscillator type	LVCMOS
Output load	15 pF
physical size	2.0mm x 1.6mm x 0.8mm
longest rise time	2.5 ns
Maximum supply voltage	1.98 V
Minimum supply voltage	1.62 V
Nominal supply voltage	1.8 V
surface mount	YES
maximum symmetry	45/55 %
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)

IM820E-1FUZS-110.0000MHZ Preview

MEMS Oscillator, High Temperature, LVCMOS/HCMOS Compatible, 1.000 MHz to 100.000MHz

IM820 Series

Features:



MEMS Technology

Direct pin to pin drop-in replacement for industry-standard packages

LVCMOS/HCMOS Compatible Output

Industry-standard package 2.0 x1.6, 2.5 x 2.0, 3.2 x 2.5, and 5.0 x 3.2 mm x mm

Pb-free, RoHS and REACH compliant

Fast delivery times

Typical Applications:



Fibre Channel

Server and Storage

GPON, EPON

100M / 1G /10G Ethernet

Electronic Specifications:

Frequency Range

Frequency Stability

Operating Temperature

Supply Voltage (Vdd) ±10%

Current Consumption

1.000 MHz to 110.000MHz

See Part Number Guide

3.8 mA typ./ 4.7 mA max

3.6 mA typ./ 4.5 mA max

3.5 mA typ./ 4.5 mA max

4.5 mA max

4.3 mA max

2.6 µA typ./ 8.5 µA max

1.4 µA typ. 5.5 µA max

0.6 µA typ./ 4.0 µA max

LVCMOS/HCMOS

45%/55%

1.0 nSec typ./ 2.0 nSec max

1.3 nSec typ./ 2.5 nSec max

90% of Vdd min

10% of Vdd max

70% of Vdd min

30% of Vdd max

50 kΩ min, 87 kΩ typ./ 150 kΩ max

2.0 MΩ min

5 mSec max

130 nSec max

5 mSec max

1.6 pSec typ./ 2.5 pSec max

1.9 pSec typ./ 3.0 pSec max

12 pSec typ./ 20 pSec max

14 pSec typ./ 25 pSec max

0.5 pSec typ./ 0.8 pSec max

1.3 pSec typ./ 2.0 pSec max

Inclusive of Initial Tolerance, Operating Temperature Range, Load, Voltage,

and Aging

OE Disable Current

Standby Current

No load condition, F = 20 MHz, Vdd = +2.8 V, +3.0 V or +3.3 V

No load condition, F = 20 MHz, Vdd = +2.5 V

No load condition, F = 20 MHz, Vdd = +1.8 V

Vdd = +2.5 V, to +3.3 V, OE = Low, output is high Z state

Vdd = +1.8 V, OE = Low, output is high Z state

Vdd = +2.8 V to 3.3 V,

= low

Vdd = +2.5 V,

= Low

Vdd = +1.8 V,

= Low

50% of waveform

Vdd = +2.5 V, +2.8 V, 3.0 V or 3.3 V from 20% to 80% of waveform

Vdd = +1.8 V, from 20% or 80% of waveform

Waveform Output

Symmetry

Rise / Fall Time

Logic “1”

Logic “0”

Input Voltage High

Input Voltage Low

Input Pull-up Impedance

Startup Time

Enable/Disable Time

Resume Time

RMS Period Jitter

Peak-to-Peak Period Jitter

RMS Period Jitter (random)

Pin 1, OE or

Pin 1, OE logic high or logic low, or

logic high

Pin 1,

logic low

Measured from the time Vdd reaches its rated minimum values

F = 110 MHz, For other frequencies, T_oe = 100 nSec + 3 * clock periods

Measured from the time

pin crosses 50% threshold.

F = 75 MHz, Vdd = +2.5 V, +2.8 V, +3.0 V or +3.3 V

F = 75 MHz, Vdd = +1.8 V

F = 75 MHz, Vdd = +2.5 V, +2.8 V, +3.0 V or +3.3 V

F = 75 MHz, Vdd = +1.8 V

F = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz

F = 75 MHz, Integration bandwidth = 12.0 kHz to 20.0 MHz

Notes:



All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.



Typical values are at +25ºC and nominal supply voltage.

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev 01/30/16_A

Page 1 of 9

MEMS Oscillator, High Temperature, LVCMOS/HCMOS Compatible, 1.000 MHz to 100.000MHz

IM820 Series

Ordering Information:

Part Number Guide

Packages

IM820B – 5.0 X 3.2

IM820C – 3.2 x 2.5

IM820D – 2.5 x 2.0

IM820E – 2.0 x 1.6

Input

Voltage

1 = +1.8 V

6 = +2.5 V

2 = +2.8 V

7 = +3.0 V

3 = +3.3 V

Operating

Temperature

E = -40ºC to +105ºC

F = -40ºC to +125ºC

Output Drive

Strength

- = Default

(see tables 2

through 5)

Stability

(ppm)

F = ±20

A = ±25

Z = ±30

B = ±50

Select

Function

H = Tri-state

S = Standby

O = N/C

Frequency

Sample Part Number:

IM820E-1E-FS-50.0000 MHz

This 50.0000 MHz oscillator in a 1.6 x 2.0 package with stability ±20 ppm from -40ºC to +105ºC using a supply voltage of +1.8 V. The Output Drive

Strength (Rise and Fall Time) is 2.40 nSec per Table 1 with 30 pF load. With Pin 1 function as Standby

Sample Part Number:

IM820C-1F-AH-66.0000 MHz

This 66.0000 MHz oscillator in a 2.5 x 3.2 package with stability ±25 ppm from -40ºC to +125ºC using a supply voltage of +1.8 V. The Output Drive

Strength (Rise and Fall Time) is 2.40 nSec per Table 1 with 30 pF load. With Pin 1 function as Tri-state

Notes:



Not all options are available at all frequencies and temperatures ranges.



Please consult with sales department for any other parameters or options.



Oscillator specification subject to change without notice.

Absolute Maximum Limits

Storage Temperature

Supply Voltage (Vdd)

Electrostatic Discharge

Solder Temperature (follow standard Pb free soldering guidelines)

Junction Temperature

-65ºC to +150ºC

-0.5 VDC to 4.0 VDC

2000 V max

260ºC max

150ºC max

Test Circuit

Waveform

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev 01/30/16_A

Page 2 of 9

MEMS Oscillator, High Temperature, LVCMOS/HCMOS Compatible, 1.000 MHz to 100.000MHz

IM820 Series

Performance Plots:

Firgure 1: Idd vs Frequency

Figure 2: Frequency vs Temperature

Figure 3: RMS Period Jitter vs Frequency

Figure 4Duty Cycle vs Frequency

Figure 5: 20% to 80% Rise Time vs Temperature

Figure 6: 20% to 80% Fall Time vs Temperature

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev 01/30/16_A

Page 3 of 9

MEMS Oscillator, High Temperature, LVCMOS/HCMOS Compatible, 1.000 MHz to 100.000MHz

IM820 Series

Figure 7: RMS Integrated Phase Jitter Random

(12 kHz to 20.0 MHz) vs. Frequency

Figure 8: RMS Integrated Phase Jitter Random

(900 kHz to 20.0 MHz) vs. Frequency

Environmental Specifications:

Environmental Compliance

Parameter

Mechanical Shock

Mechanical Vibration

Temperature Cycle

Solderability

Moisture Sensitivity Level

Condition/Test Method

MIL-STD-883F, Method 2002

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method 2003

MSL Level 1 at +260ºC

Pb Free Solder Reflow Profile

Ts max to T

(Ramp-up Rate)

Preheat

Temperature min (Ts min)

Temperature typ (Ts typ)

Temperature max (Ts max)

Time (Ts)

Ramp-up Tate (T

to Tp

Time Maintained Above

Temperature (T

)

Time (T

Peak Temperature (Tp)

Time within 5ºC to Peak

Temperature (Tp)

Ramp-down Rate

Tune 25ºC to Peak

Temperature

Moisture Sensitivity Level

(MSL)

3ºC / second max

150ºC

175ºC

200ºC

60 to180 seconds

3ºC / second max

217ºC

60 to 150 seconds

260ºC max for seconds

20 to 40 seconds

6ºC / second max

8 minute max

Level 1

Units are backward compatible with +240ºC reflow processes

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev 01/30/16_A

Page 4 of 9

MEMS Oscillator, High Temperature, LVCMOS/HCMOS Compatible, 1.000 MHz to 100.000MHz

IM820 Series

Pin Functionally

Pin Description

Symbol

Tri-state

Standby

Functionality

High or Open = specified frequency output

Low = Output is high impedance, only output is disabled.

High or Open = specified frequency output.

Low = Output is low. Device goes to sleep mode. Supply current

reduces to standby current.

Any voltage between 0.0 V to Vdd or Open = specified frequency

output

Pin 1 has no functiion

Electrical ground

Oscillator output

Power supply voltage

Pin Assignments

N/C

No Connect

ST 1

N/C

Top View

Vdd

GND

Power

Out

Output

Vdd

Power

Notes:

1. In OE or

mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally

driven. If Pin 1 needs to be left floating, use the NC option.

2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required.

GND 2

OUT

Pin 1 Configuration Options (OE, or

Output Enable (OE) Mode

, or NC)

Pin 1 of the IM820 can be factory-programmed to support three modes: Output Enable (OE), Standby (

) or No Connect (NC).

In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device

continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the

output is typically enabled in <1 µSec.

Standby

Mode

In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The

current is reduced to a standby current, typically in the range of a few µA. When

is pulled High, the device goes through the

“resume” process, which can take up to 5 mSec.

No Connect (NC) Mode

In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level

on Pin 1.

Table 1 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode.

Parameters

Active current 20.0 MHz (max +1.80 VDC)

OE disable current (max +1.80 VDC)

Standby current (typical +1.80 VDC)

OE enable time at 20.0 MHz (max)

Resume time from standby

(max, all frequency)

Output driver in OE disable/standby mode

Table 1 OE vs.

6.0 mA

4.5 mA

N/A

130 nSec

N/A

High Z

vs. NC

6.0 mA

N/A

0.6 µA

N/A

5 mSec

6.0 mA

N/A

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev 01/30/16_A

Page 5 of 9

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