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IKU06N60RBKMA1

Description
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-251, GREEN, PLASTIC, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size2MB,17 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IKU06N60RBKMA1 Overview

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-251, GREEN, PLASTIC, IPAK-3

IKU06N60RBKMA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1299752818
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum5.7 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)335 ns
Nominal on time (ton)22 ns
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