2N7396R datasheet, PDF - EEWORLD Datasheet

2N7396R: Description5A, 200V, N-CHANNEL, Si, POWER, MOSFET, SIMILAR TO TO-205, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size151KB，26 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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2N7396R Overview

5A, 200V, N-CHANNEL, Si, POWER, MOSFET, SIMILAR TO TO-205, 3 PIN

Parameter Name	Attribute value
Objectid	2078389015
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	15 A
Certification status	Not Qualified
Guideline	MIL-19500/631B
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON

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