IS42S16160J-7BI datasheet, PDF

IS42S16160J-7BI: DescriptionSynchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, TFBGA-54; Categorystorage storage; File Size793KB，63 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS42S16160J-7BI Overview

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, TFBGA-54

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1827747496
package instruction	TFBGA,
Reach Compliance Code	compliant
Country Of Origin	Mainland China, Taiwan
ECCN code	EAR99
YTEOL	4
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
JESD-30 code	S-PBGA-B54
length	8 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	SQUARE
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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