IS61NLP25618EC-200B2L datasheet, PDF

IS61NLP25618EC-200B2L: DescriptionZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119; Categorystorage storage; File Size2MB，40 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS61NLP25618EC-200B2L Overview

ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1247971955
Parts packaging code	BGA
package instruction	BGA, BGA119,7X17,50
Contacts	119
Reach Compliance Code	compliant
Country Of Origin	Mainland China, Taiwan
ECCN code	3A991.B.2.A
YTEOL	5
Maximum access time	3.1 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e1
length	22 mm
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	2.5/3.3,3.3 V
Certification status	Not Qualified
Maximum seat height	3.5 mm
Maximum standby current	0.08 A
Minimum standby current	3.14 V
Maximum slew rate	0.21 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
width	14 mm

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