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IS61NVP25618EC-200B2L

Description
ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size2MB,40 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
Environmental Compliance
Download Datasheet Parametric View All

IS61NVP25618EC-200B2L Overview

ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119

IS61NVP25618EC-200B2L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1247972099
Parts packaging codeBGA
package instructionBGA, BGA119,7X17,50
Contacts119
Reach Compliance Codecompliant
Country Of OriginMainland China, Taiwan
ECCN code3A991.B.2.A
YTEOL5.05
Maximum access time3.1 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee1
length22 mm
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5 V
Certification statusNot Qualified
Maximum seat height3.5 mm
Maximum standby current0.08 A
Minimum standby current2.37 V
Maximum slew rate0.21 mA
Maximum supply voltage (Vsup)2.625 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
width14 mm
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