IS61NVP25618EC-250B3 datasheet, PDF

IS61NVP25618EC-250B3: DescriptionZBT SRAM, 256KX18, 2.6ns, CMOS, PBGA165, TFBGA-165; Categorystorage storage; File Size2MB，40 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS61NVP25618EC-250B3 Overview

ZBT SRAM, 256KX18, 2.6ns, CMOS, PBGA165, TFBGA-165

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1247972116
Parts packaging code	BGA
package instruction	TBGA, BGA165,11X15,40
Contacts	165
Reach Compliance Code	compliant
Country Of Origin	Mainland China, Taiwan
ECCN code	3A991.B.2.A
YTEOL	5.27
Maximum access time	2.6 ns
Maximum clock frequency (fCLK)	250 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
length	15 mm
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	2.5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.08 A
Minimum standby current	2.37 V
Maximum slew rate	0.235 mA
Maximum supply voltage (Vsup)	2.625 V
Minimum supply voltage (Vsup)	2.375 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
width	13 mm

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