IS64NLP25618EC-200B2A3 datasheet, PDF

IS64NLP25618EC-200B2A3: DescriptionZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119; Categorystorage storage; File Size2MB，40 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS64NLP25618EC-200B2A3 Overview

ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1247972385
Parts packaging code	BGA
package instruction	BGA, BGA119,7X17,50
Contacts	119
Reach Compliance Code	compliant
Country Of Origin	Mainland China, Taiwan
ECCN code	3A991.B.2.A
YTEOL	5
Maximum access time	3.1 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
length	22 mm
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	18
Number of functions	1
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	256KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	2.5/3.3,3.3 V
Certification status	Not Qualified
Filter level	AEC-Q100
Maximum seat height	3.5 mm
Maximum standby current	0.1 A
Minimum standby current	3.14 V
Maximum slew rate	0.235 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
width	14 mm

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