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IS64NLP25618EC-200B2LA3

Description
ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size2MB,40 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
Environmental Compliance
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IS64NLP25618EC-200B2LA3 Overview

ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA119, BGA-119

IS64NLP25618EC-200B2LA3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1247972386
Parts packaging codeBGA
package instructionBGA, BGA119,7X17,50
Contacts119
Reach Compliance Codecompliant
Country Of OriginMainland China, Taiwan
ECCN code3A991.B.2.A
YTEOL5
Maximum access time3.1 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee1
length22 mm
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Filter levelAEC-Q100
Maximum seat height3.5 mm
Maximum standby current0.1 A
Minimum standby current3.14 V
Maximum slew rate0.235 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
width14 mm

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