IS64WV25616EFBLL-10CT2LA3 datasheet, PDF

IS64WV25616EFBLL-10CT2LA3: DescriptionStandard SRAM,; Categorystorage storage; File Size579KB，21 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS64WV25616EFBLL-10CT2LA3 Overview

Standard SRAM,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	7248986887
Reach Compliance Code	compliant
Country Of Origin	Mainland China, Taiwan
ECCN code	3A991.B.2.A
YTEOL	5
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
length	18.41 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	44
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	256KX16
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
Maximum standby current	0.02 A
Minimum standby current	2 V
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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