DTC314TUT106 datasheet, PDF - EEWORLD Datasheet

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DTC314TUT106: Descriptiontrans prebias npn 200mw umt3; CategoryDiscrete semiconductor The transistor; File Size64KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DTC314TUT106 Overview

trans prebias npn 200mw umt3

DTC314TUT106 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN SILVER COPPER
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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DTC314TU / DTC314TK

Transistors

Digital transistors (built-in resistor)

DTC314TU / DTC314TK

!

Features

In addition to the features of regular

digital transistors,

1) Low saturation voltage, typically

V

CE(sat)

=40mV at I

C

/I

B

=50mA/2.5mA,

makes these transistors ideal for

muting circuits.

2) These transistors can be used at

high current levels, I

C

=600mA.

!

External dimensions

(Units : mm)

DTC314TU

2.0±0.2

1.3±0.1

0.65 0.65

(1)

(2)

0.2

0.9±0.1

0.7±0.1

1.25±0.1

2.1±0.1

0~0.1

(3)

ROHM : UMT3

EIAJ : SC-70

0.3

+0.1

0.15±0.05

−0

All terminals have same dimensions

0.1~0.4

Abbreviated symbol : H04

2.9±0.2

1.9±0.2

0.95 0.95

(1)

(2)

(1) Emitter

(2) Base

(3) Collector

!

Structure

NPN digital transistor

(Built-in resistor type)

DTC314TK

1.1

+0.2

−0.1

0.8±0.1

1.6

+0.2

−0.1

!

Equivalent circuit

ROHM : SMT3

EIAJ : SC-59

C

B

R

1

E

(3)

0.4

+0.1

−0.05

All terminals have same dimensions

2.8±0.2

0~0.1

0.3~0.6

+0.1

0.15

−0.06

Abbreviated symbol : H04

(1) Emitter

(2) Base

(3) Collector

B : Base

C : Collector

E : Emitter

!

Absolute maximum ratings

(Ta=25°C)

Parameter

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits(DTC314T

U

K

30

15

5

600

200

150

−55~+150

V

mA

mW

°C

)

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

DTC314TUT106 Related Products

	DTC314TUT106	DTC314TKT146	DTC314TUTA106
Description	trans prebias npn 200mw umt3	transistors switching - resistor biased npn 15v 600ma	Small Signal Bipolar Transistor, 0.6A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor	ROHM Semiconductor
Parts packaging code	SC-70	SC-59	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compli	compli	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A
Collector-emitter maximum voltage	15 V	15 V	15 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e1	e1	e1
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	-
Maximum power dissipation(Abs)	0.2 W	0.2 W	-

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