DTD133H
Transistors
Digital transistors (Includes resistors)
DTD133H
!
Features
1) A built-in bias resistor allows inverter circuit configuration
without external resistors for input (see equivalent circuit
diagram).
2) The bias resistor consists of a thin-film resistor which is
completely isolated, providing the capability to negative-bias the
input, and avoiding parasitic effects.
3) Operation starts by simply setting On/Off conditions, simplifying
the design of equipment using the transistors.
4) High packing density.
!
External dimensions
(Units : mm)
DTD133HK
(1)
0.4
(3)
1.6
2.8
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
DTD133HK
Power
dissipation DTD133HS
Junction temperature
Storage temperature
Symbol
V
CC
V
I
I
C
Pd
Tj
Tstg
Limits
50
−6~+20
500
200
300
150
−55~+150
Unit
V
V
mA
mW
°C
°C
DTD133HS
4
3
2
(15Min.)
3Min.
0.45
2.5
5
(1) (2) (3)
0.5 0.45
0.8
ROHM : SPT
EIAJ : SC-72
(1) GND
(2) OUT
(3) IN
!
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTD133HK
SMT3
G08
T146
3000
DTD133HS
SPT
-
TP
5000
!
Equivalent circuit
IN
R
1
R
2
OUT
GND
IN
GND
OUT
!
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min.
−
2.0
−
−
−
56
−
2.4
−
Typ.
−
−
0.1
−
−
−
3.3
3.0
200
Max.
0.5
−
0.3
2.4
0.5
−
−
3.7
−
Unit
V
V
V
mA
µA
−
kΩ
−
MHz
Conditions
V
CC
=5V
, I
O
=100µA
V
O
=0.3V
, I
O
=20mA
I
O
=50mA
, I
I
=2.5mA
V
I
=5V
V
CC
=50V
, V
I
=0V
I
O
=50mA
, V
O
=5V
−
−
V
CE
=10V
, I
E
=−5mA
, f=100MHz
1.1
0.95 0.95
1.9
2.9
(2)
Taping specifications
Transition frequency
∗
Transition frequency of the device.
∗
1/2
DTD133H
Transistors
!
Electrical characteristics curves
100
50
V
O
=0.3V
10m
5m
V
CC
=5V
Ta=100˚C
25˚C
−40˚C
1k
500
V
O
=5V
Ta=100˚C
25˚C
−40˚C
INPUT VOLTAGE : V
I (on)
(V)
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
10
5
2
1
DC CURRENT GAIN : G
I
2.0
2.5
3.0
20
OUTPUT CURRENT : Io
(A)
2m
200
100
50
20
10
5
2
Ta=−40˚C
25˚C
100˚C
500m
200m
100m
500µ 1m
2m
5m 10m 20m
50m 100m 200m 500m
1µ
0
0.5
1.0
1.5
1
500µ 1m
2m
5m 10m 20m
50m 100m 200m 500m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output current
characteristics
1
500m
l
O
/ l
I
=20
OUTPUT VOLTAGE : V
O (on)
(V)
200m
100m
50m
20m
10m
5m
2m
1m
500µ 1m
2m
5m 10m 20m
50m 100m 200m 500m
Ta=100˚C
25˚C
−40˚C
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output current
characteristics
2/2
FPGA/CPLD
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