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DTC614TKT146

Description
trans prebias npn 200mw smt3
CategoryDiscrete semiconductor    The transistor   
File Size52KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTC614TKT146 Overview

trans prebias npn 200mw smt3

DTC614TKT146 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time13 weeks
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)820
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
DTC614TU / DTC614TK
Transistors
Digital transistors (built-in resistor)
DTC614TU / DTC614TK
Features
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat)
=40mV at I
C
/ I
B
=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C
=600mA.
External dimensions
(Unit : mm)
UMT3
<SC-70>
(1)
2.0±0.2
1.3±0.1
0.9
±0.1
0.2
0.7
±0.1
0.65 0.65
(2)
1.25
±0.1
2.1
±0.1
0−0.1
(3)
0.3
+0.1
−0
0.15
±0.05
Structure
NPN digital transistor
(Built-in resistor type)
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : R04
SMT3
<SC-59>
2.9±0.2
1.9±0.2
0.95 0.95
1.1
+0.2
−0.1
0.8±0.1
Equivalent circuit
(1)
(2)
(3)
1.6
+0.2
−0.1
2.8±0.2
C
B
R
R=10kΩ
E
(1) Emitter
(2) Base
(3) Collector
0.4
+0.1
−0.05
0.15
+0.1
−0.06
Each lead has same dimensions
Abbreviated symbol : R04
B : Base
C : Collector
E : Emitter
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
20
20
12
600
200
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Rev.A
0.3Min.
0.1Min.
1/2

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