KSP62/63/64
KSP62/63/64
Darlington Transistor
• Collector-Emitter Voltage: V
CES
=KSP62: 20V
KSP63/64: 30V
• Collector Power Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP62
: KSP63/64
V
CEO
Collector-Emitter Voltage
: KSP62
: KSP63/64
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-20
-30
-10
-500
625
150
-55~150
V
V
V
mA
mW
°C
°C
-20
-30
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CES
Parameter
Collector-Emitter Breakdown Voltage
: KSP62
: KSP63/64
Collector Cut-off Current
: KSP62
: KSP63/64
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: KSP62
: KSP63
: KSP64
: KSP63
: KSP64
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: KSP62
: KSP63/64
* Base-Emitter On Voltage
: KSP62
: KSP63/64
Current Gain Bandwidth Product
: KSP63/64
V
CE
= -5V, I
C
= -10mA
20K
5K
10K
10K
20K
-1.0
-1.5
-1.4
-2
125
V
V
V
V
MHz
V
CB
= -15V, I
E
=0
V
CB
= -30V, I
E
=0
V
BE
= -10V, I
C
=0
-100
-100
-100
nA
nA
nA
Test Condition
I
C
= -100µA, I
B
=0
Min.
-20
-30
Max.
Units
V
V
I
CBO
V
CE
= -5V, I
C
= -100mA
I
C
= -10mA, I
B
= -0.01mA
I
C
= -100mA, I
B
= -0.1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
V
CE
= -5V, I
C
= -100mA
f=100MHz
V
BE
(on)
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP62/63/64
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000k
-10
V
CE
= -5V
I
C
= 1000 I
B
V
BE
(sat)
h
FE
, DC CURRENT GAIN
100k
-1
V
CE
(sat)
10k
-0.1
1k
-1
-10
-100
-1000
-0.01
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
V
CE
= -5V
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
100
100
10
10
1
-0.0
1
-1
-10
-100
-1000
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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