KSC1845
KSC1845
Audio Frequency Low Noise Amplifier
• Complement to KSA992
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
120
120
5
50
10
500
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
BE
(sat)
f
T
C
ob
NL
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Level
Test Condition
V
CB
=120V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=0.1mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=30V, I
E
=0, f=1MHz
50
150
200
0.55
580
600
0.59
0.07
110
1.6
25
2.5
40
Min.
Typ.
Max.
50
50
1200
0.65
0.3
V
V
MHz
pF
mV
Units
nA
nA
h
FE
Classification
Classification
h
FE2
P
200 ~ 400
F
300 ~ 600
E
400 ~ 800
U
600 ~ 1200
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002
KSC1845
Typical Characteristics
10
I
B
=16
µ
A
I
B
=14
µ
A
1.0
I
B
=1.4
µ
A
I
B
=1.2
µ
A
I
B
=1.0
µ
A
I
B
=0.8
µ
A
I
B
=0.6
µ
A
I
C
[mA], COLLECTOR CURRENT
8
I
B
=12
µ
A
I
B
=10
µ
A
I
B
=8
µ
A
4
6
I
C
[mA], COLLECTOR CURRENT
0.8
0.6
I
B
=6
µ
A
I
B
=4
µ
A
0.4
I
B
=0.4
µ
A
2
I
B
=2
µ
A
0.2
I
B
=0.2
µ
A
0
0
1
2
3
4
5
0.0
0
20
40
60
80
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
900
800
V
CE
= 6V
Pule Test
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
100
I
C
=10I
B
Pulse Test
10
h
FE
, DC CURRENT GAIN
700
600
500
400
300
200
100
0
0.01
1
V
BE
(sat)
0.1
V
CE
(sat)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
10k
I
E
=0
f
T
[MHz],
CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz
V
CE
=6V
C
ob
[pF], CAPACITANCE
1k
1
100
0.1
1
10
100
10
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
E
[mA], EMITTER CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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