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BCR 149T E6327

Description
trans prebias npn 250mw sc75
Categorysemiconductor    Discrete semiconductor   
File Size200KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR 149T E6327 Overview

trans prebias npn 250mw sc75

BCR 149T E6327 Parametric

Parameter NameAttribute value
Datasheets
BCR149
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)70mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti150MHz
Power - Max250mW
Mounting TypeSurface Mou
Package / CaseSC-75, SOT-416
Supplier Device PackagePG-SC-75
Other NamesBCR149TE6327XTSP000014814
BCR149...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 47 kΩ)
BCR149F/L3
BCR149T
C
3
R
1
1
B
2
E
EHA07264
Type
BCR149F*
BCR149L3*
BCR149T*
* Preliminary
Marking
UAs
UA
UA
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
Package
TSFP-3
TSLP-3-4
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR149F,
T
S
128°C
BCR149L3,
T
S
135°C
BCR149T,
T
S
109°C
Junction temperature
Storage temperature
1
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
80
5
70
250
250
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
2006-05-10

BCR 149T E6327 Related Products

BCR 149T E6327 BCR 149F E6327 BCR 149L3 E6327
Description trans prebias npn 250mw sc75 trans prebias npn 250mw tsfp-3 trans prebias npn 250mw tslp-3
Standard Package 3,000 3,000 15,000
Category Discrete Semiconductor Products Discrete Semiconductor Products Discrete Semiconductor Products
Family Transistors (BJT) - Single, Pre-Biased Transistors (BJT) - Single, Pre-Biased Transistors (BJT) - Single, Pre-Biased
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 70mA 70mA 70mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V
Resistor - Base (R1) (Ohms) 47k 47k 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V 120 @ 5mA, 5V 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
Frequency - Transiti 150MHz 150MHz 150MHz
Power - Max 250mW 250mW 250mW
Mounting Type Surface Mou Surface Mou Surface Mou
Package / Case SC-75, SOT-416 SOT-723 SC-101, SOT-883
Supplier Device Package PG-SC-75 PG-TSFP-3 PG-TSLP-3
Other Names BCR149TE6327XTSP000014814 BCR149FE6327XTSP000014849 BCR149L3E6327XTSP000014862
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