KSP25/26/27
KSP25/26/27
Darlington Transistor
• Collector-Emitter Voltage: V
CES
=KSP25: 40V
KSP26: 50V
KSP27: 60V
• Collector Power Dissipation: P
C
(max) =625mW
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Collector-Emitter Voltage
: KSP25
: KSP26
: KSP27
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
40
50
60
10
500
625
150
-55~150
V
V
V
V
mA
mW
°C
°C
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CES
Parameter
Collector-Emitter Breakdown Voltage
: KSP25
: KSP26
: KSP27
Collector-Base Breakdown Voltage
: KSP25
: KSP26
: KSP27
Collector Cut-off Current
: KSP25
: KSP26
: KSP27
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
V
CE
=30V, I
E
=0
V
CE
=40V, I
E
=0
V
CE
=50V, I
E
=0
V
EB
=10V, I
B
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
10K
10K
1.5
2
V
V
100
100
100
100
nA
nA
nA
nA
Test Condition
I
C
=100µA, I
E
=0
Min.
40
50
60
I
C
=100µA, I
E
=0
40
50
60
V
V
V
Max.
Units
V
V
V
BV
CBO
I
CBO
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP25/26/27
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000k
10
V
CE
= 5V
I
C
= 1000 I
B
h
FE
, DC CURRENT GAIN
100k
V
BE
(sat)
1
V
CE
(sat)
10k
1k
1
10
100
1000
0.1
10
100
400
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
200
10k
V
CE
= 5V
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
100
1k
100
µ
S
1mS
1S
T
C
= 25 C
O
10
100
T
a
= 25 C
O
1
0.0
10
0.4
0.8
1.2
1.6
2.0
2.4
1
10
100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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