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K4H280438B-TLA0T

Description
DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66,
Categorystorage    storage   
File Size330KB,55 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4H280438B-TLA0T Overview

DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66,

K4H280438B-TLA0T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid113210281
package instructionTSSOP, TSSOP66,.46
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL2
Maximum access time0.8 ns
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width4
Number of terminals66
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length2,4,8
Maximum standby current0.025 A
Maximum slew rate0.295 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationDUAL
128Mb DDR SDRAM
DDR SDRAM Specification
Version 1.31
- 1 -
REV. 1.31 Nov. 3. 2001
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