DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1125504913 |
| package instruction | TSSOP, TSSOP66,.46 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum access time | 0.8 ns |
| Maximum clock frequency (fCLK) | 100 MHz |
| I/O type | COMMON |
| interleaved burst length | 2,4,8 |
| JESD-30 code | R-PDSO-G66 |
| JESD-609 code | e0 |
| memory density | 134217728 bit |
| Memory IC Type | DDR1 DRAM |
| memory width | 4 |
| Number of terminals | 66 |
| word count | 33554432 words |
| character code | 32000000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 32MX4 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSSOP |
| Encapsulate equivalent code | TSSOP66,.46 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| power supply | 2.5 V |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| Continuous burst length | 2,4,8 |
| Maximum standby current | 0.003 A |
| Maximum slew rate | 0.24 mA |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal pitch | 0.635 mm |
| Terminal location | DUAL |
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