K4H280438F-TLA0 datasheet, PDF

K4H280438F-TLA0: DescriptionDDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66; Categorystorage storage; File Size207KB，23 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4H280438F-TLA0 Overview

DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1125504916
package instruction	TSSOP, TSSOP66,.46
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.8 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e0
memory density	134217728 bit
Memory IC Type	DDR1 DRAM
memory width	4
Number of terminals	66
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	2,4,8
Maximum standby current	0.003 A
Maximum slew rate	0.24 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL

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