K4H510838C-ZIB3T datasheet, PDF

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K4H510838C-ZIB3T: DescriptionCache DRAM Module, 64MX8, 0.7ns, CMOS, PBGA60; Categorystorage storage; File Size416KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H510838C-ZIB3T Overview

Cache DRAM Module, 64MX8, 0.7ns, CMOS, PBGA60

K4H510838C-ZIB3T Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1126059934
package instruction	BGA, BGA60,9X12,40/32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	CACHE DRAM MODULE
memory width	8
Humidity sensitivity level	1
Number of terminals	60
word count	67108864 words
character code	64000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.36 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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K4H510838C

K4H511638C

Industrial

DDR SDRAM

512Mb C-die DDR SDRAM Specification

with Pb-Free

(RoHS compliant)

Industrial Temp. -40 to 85°C

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.6 January 2006

K4H510838C

K4H511638C

Industrial

DDR SDRAM

Table of Contents

1.0 Key Features ...............................................................................................................................4

2.0 Ordering Information ...................................................................................................................4

3.0 Operating Frequencies................................................................................................................4

4.0 Pin Description of TSOP .............................................................................................................5

5.0 Ball Description of FBGA ...........................................................................................................5

6.0 Package Physical Dimension .....................................................................................................6

7.0 Block Diagram (16Mbit x8 / 8Mbit x 16 I/O x4 Banks) ..............................................................7

8.0 Input/Output Function Description ............................................................................................8

9.0 Command Truth Table.................................................................................................................9

10.0 General Description ................................................................................................................10

11.0 Absolute Maximum Rating......................................................................................................10

12.0 DC Operating Conditions ........................................................................................................10

13.0 DDR SDRAM Spec Items & Test Conditions ........................................................................11

14.0 Input/Output Capacitance .......................................................................................................11

15.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12

16.0 DDR SDRAM IDD spec table ..................................................................................................13

17.0 AC Operating Conditions .......................................................................................................14

18.0 AC Overshoot/Undershoot specification for Address and Control Pins............................14

19.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins ..............................15

20.0 AC Timming Parameters & Specifications ............................................................................16

21.0 System Characteristics for DDR SDRAM ..............................................................................17

22.0 Component Notes ...................................................................................................................18

23.0 System Notes ...........................................................................................................................20

24.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21

Rev. 1.6 January 2006

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