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K4S28323LE-FL1L

Description
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90
Categorystorage    storage   
File Size81KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4S28323LE-FL1L Overview

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90

K4S28323LE-FL1L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid104351751
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL2
Maximum access time7 ns
Maximum clock frequency (fCLK)105 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
JESD-609 codee0
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of terminals90
word count4194304 words
character code4000000
Maximum operating temperature70 °C
Minimum operating temperature-25 °C
organize4MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.0005 A
Maximum slew rate0.12 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
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