BD176/178/180
BD176/178/180
Medium Power Linear and Switching
Applications
• Complement to BD 175/177/179 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
*Collector-Base Voltage
Parameter
: BD176
: BD178
: BD180
: BD176
: BD178
: BD180
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
-3
-7
30
70
8.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°C/W
°C/W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
C
P
C
R
θja
R
θjc
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction to Ambient
Junction to Case
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD176
: BD178
: BD180
Collector Cut-off Current : BD176
: BD178
: BD180
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 100
- 100
-1
40
15
250
- 0.8
- 1.3
3
V
V
MHz
Typ.
Max.
Units
V
V
V
µA
µA
µA
mA
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 150mA
V
CE
= - 2V, I
C
= - 1A
I
C
= -1 A , I
B
= - 0.1A
V
CE
= - 2V, I
C
= -1 A
V
CE
= -10V, I
C
= - 250mA
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
h
FE
Classificntion
Classification
h
FE1
* Classification 16: Only BD 176
©2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
BD176/178/180
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
V
CE
(sat)
-0.1
10
1
-0.01
-0.01
-0.1
-1
-10
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
I
C
MAX. (Pulsed)
10
µ
s
0
µ
10
40
35
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (Continuous)
1m
DC
P
C
[W], POWER DISSIPATION
-100
s
30
s
25
-1
20
15
10
BD176
BD178
BD180
5
-0.1
-1
-10
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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No Identification Needed
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Obsolete
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©2002 Fairchild Semiconductor Corporation
Rev. I1
Embedded System
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