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BCR 199T E6327

Description
trans prebias pnp 250mw sc75
Categorysemiconductor    Discrete semiconductor   
File Size200KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR 199T E6327 Overview

trans prebias pnp 250mw sc75

BCR 199T E6327 Parametric

Parameter NameAttribute value
Datasheets
BCR199
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)70mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti200MHz
Power - Max250mW
Mounting TypeSurface Mou
Package / CaseSC-75, SOT-416
Supplier Device PackagePG-SC-75
Other NamesBCR199TE6327XTSP000014816
BCR199...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 47kΩ)
BCR199F/L3
BCR199T
C
3
R
1
1
B
2
E
EHA07180
Type
BCR199F*
BCR199L3*
BCR199T*
* Preliminary
Marking
UBs
UB
UB
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
Package
TSFP-3
TSLP-3-4
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR199F,
T
S
128°C
BCR199L3,
T
S
135°C
BCR199T,
T
S
109°C
Junction temperature
Storage temperature
1
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
80
5
70
250
250
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
2006-05-10

BCR 199T E6327 Related Products

BCR 199T E6327 BCR 199F E6327 BCR 199L3 E6327
Description trans prebias pnp 250mw sc75 trans prebias pnp 250mw tsfp-3 TRANS PREBIAS PNP 250MW TSLP-3
Power - Max 250mW - 250mW

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