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BCR 519 E6327

Description
trans prebias npn 300mw sot23-3
Categorysemiconductor    Discrete semiconductor   
File Size154KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR 519 E6327 Overview

trans prebias npn 300mw sot23-3

BCR 519 E6327 Parametric

Parameter NameAttribute value
Datasheets
BCR519
Product Photos
SOT-23-3
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti100MHz
Power - Max330mW
Mounting TypeSurface Mou
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3
Other NamesBCR519E6327XTSP000015052
BCR519
NPN Silicon Digital Transistor
Switching circuit, inverter circuit,
driver circuit
Built in bias resistor (R
1
= 4.7 kΩ)
3
1
2
C
3
R
1
1
B
2
E
EHA07264
Type
BCR519
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T
S
79 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Marking
XKs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
3=C
Package
SOT23
Value
50
50
30
5
500
330
150
mA
mW
°C
Unit
V
-65 ... 150
Value
215
Unit
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
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