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WBC-R0202GS-02-3200-C

Description
RES,SMT,THIN FILM,320 OHMS,100WV,.25% +/-TOL,-50,50PPM TC,0202 CASE
CategoryPassive components    The resistor   
File Size376KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance  
Download Datasheet Parametric View All

WBC-R0202GS-02-3200-C Overview

RES,SMT,THIN FILM,320 OHMS,100WV,.25% +/-TOL,-50,50PPM TC,0202 CASE

WBC-R0202GS-02-3200-C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1177354161
Reach Compliance Codecompliant
ECCN codeEAR99
structureChip
Manufacturer's serial numberWBC(DISCRETE)
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package length0.508 mm
Package formSMT
Package width0.508 mm
method of packingTray
Rated power dissipation(P)0.25 W
resistance320 Ω
Resistor typeFIXED RESISTOR
seriesWBC(DISCRETE)
size code0202
technologyTHIN FILM
Temperature Coefficient50 ppm/°C
Tolerance0.25%
Operating Voltage100 V
Wire Bondable
Chip Resistors
WBC Series
Discrete or tapped schematics
MIL inspection available
High resistor density
IRC Advanced Film Division
IRC’s WBC series wire bondable chip resistors are ideally suited for
the most demanding hybrid application. The WBC combines IRC’s
TaNSil
®
tantalum nitride thin film technology with silicon substrate processing to produce an extremely small
footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil
®
resistor film.
Available in a wide range of tolerances and temperature coefficients to fit a variety of hybrid circuit applica-
tions. Custom resistance values, sizes and schematics are available on request from the factory.
Physical Data
R0202 - Discrete
(0.508mm ±0.025)
0.020˝ ±0.001
Electrical Data
Absolute Tolerance
Absolute TCR
R
Package Power Rating
(@ 70°C)
Rated Operating Voltage
(not to exceed
P x R )
Operating Temperature
Back contact
Noise
Substrate Material
Top contact
Substrate Thickness
Aluminum
Gold
R0202 and
T0303
B0202
Passivation
to ±0.1%
to ±25ppm/°C
250mW
100V
-55°C to +150°C
<-30dB
Oxidized Silicon
(10KÅ SiO
2
min)
0.010˝ ±0.001
(0.254mm ±0.025)
10KÅ minimum
15KÅ minimum
Silicon
(Gold available)
Gold
3KÅ minimum
Silicon Dioxide or
Silicon Nitride
0.004˝ min bond pad size
0.020˝ ±0.001
(0.508mm ±0.025)
B0202 - Discrete back contact
(0.508mm ±0.025)
0.020˝ ±0.001
R
Top contact
pad chamfered
0.004˝ min bond pad size
0.020˝ ±0.001
(0.508mm ±0.025)
T0303 - Tapped network ½R + ½R
Bond Pad
Metallization
(0.762mm ±0.025)
0.030˝ ±0.001
Backside
½R
½R
0.030˝ ±0.001
(0.762mm ±0.025)
0.004˝ min bond pad size
General Note
IRC reserves the right to make changes in product specification without notice or liability.
All information is subject to IRC’s own data and is considered accurate at time of going to print.
© IRC Advanced Film Division
• Corpus Christi Texas 78411 USA
Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Email: afdsales@irctt.com • Website: www.irctt.com
A subsidiary of
TT electronics plc
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