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RN1903FE(TE85L,F)

Description
tran dual npn es6 50v 100a
CategoryDiscrete semiconductor    The transistor   
File Size546KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN1903FE(TE85L,F) Overview

tran dual npn es6 50v 100a

RN1903FE(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)70
Number of components2
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Transistor component materialsSILICON
RN1901FE~RN1906FE
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1901FE, RN1902FE, RN1903FE
RN1904FE, RN1905FE, RN1906FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Complementary to RN2901FE to RN2906FE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1901FE
RN1902FE
R2
RN1903FE
RN1904FE
E
RN1905FE
RN1906FE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
JEDEC
JEITA
TOSHIBA
2-2N1G
Weight: 3 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1901FE to
RN1906FE
RN1901FE to
RN1904FE
RN1905FE
RN1906FE
Symbol
V
CBO
V
CEO
Rating
50
50
10
V
EBO
5
I
C
P
C
(Note1)
T
j
T
stg
100
100
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
(top view)
6
5
4
Emitter-base voltage
Q1
Q2
Collector current
Collector power dissipation RN1901FE to
RN1906FE
Junction temperature
Storage temperature range
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
Note1:
Start of commercial production
2000-05
1
2014-03-01

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