The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 4 May 2009.
INCH-POUND
MIL-PRF-19500/452J
4 February 2009
SUPERSEDING
MIL-PRF-19500/452H
26 March 2008
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,
VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1
THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED
(TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H,
JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias
current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each
unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided
for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as
specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), figure 3 (JANHCA and JANKCA),
figure 4 (JANHCB and JANKCB), and figure 5 (JANHCC and JANKCC).
1.3 Maximum ratings. Unless otherwise specified TA = +25C.
PT
TSTG and TJ
C
-55 to +175
IZM (1)
Power derating
above TA = +25C
mW/C
3.33
mW
500
mA dc
70
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper IZ as specified in 1.4 herein.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/452J
DO-7, 35
Symbol
BD
BL
LD
LL
LL1
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.060
.107
1.52
2.72
.120
.300
3.05
7.62
.018
.023
0.46
0.58
1.000
1.500
25.40
38.10
0.050
1.27
Notes
3
3
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but
shall not be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to
x
symbology.
FIGURE 1. Physical dimensions 1N4565A-1 through 1N4584A-1 (DO-7 and DO-35).
3
MIL-PRF-19500/452J
Symbol
A
B
C
D
E
F
G
H
J
K
L
M
N
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.0280
.0320
.711
.813
.0080
.0100
.203
.254
.0104
.0106
.264
.269
.0019
.0021
.048
.053
.0054
.0056
.137
.142
.0020
.0040
.050
.102
.0280
.0320
.711
.813
.0030
.0050
.076
.127
.0030
.0050
.076
.127
.0209
.0211
.531
.536
.0080
.0100
.203
.254
.0104
.0106
.264
.269
.0059
.0061
.150
.155
Backside must be electrically isolated
to ensure proper performance.
Design data
Metallization:
Top: 1 (Cathode)
2 (Anode)
3 (Test pad)
Al
Al
Al
Circuit layout data:
For zener operation, cathode must be
operated positive with respect to anode.
Test pad is for wire bond evaluation only.
No electrical contact is made with test pad.
Back:
Au
Al thickness
Gold thickness
Chip thickness
25,000Å minimum.
4,000Å minimum.
.010 inch (0.25 mm) ±0.002 inch (+0.05 mm).
NOTES:
1. Dimensions are in inches unless otherwise indicated.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
x
symbology.
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
5
Embedded System
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