EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28, CERAMIC, DIP-28
| Parameter Name | Attribute value |
| Parts packaging code | DIP |
| package instruction | CERAMIC, DIP-28 |
| Contacts | 28 |
| Reach Compliance Code | unknow |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 350 ns |
| JESD-30 code | R-GDIP-T28 |
| JESD-609 code | e0 |
| memory density | 65536 bi |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 8KX8 |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Programming voltage | 5 V |
| Certification status | Qualified |
| Filter level | MIL-STD-883 |
| Maximum seat height | 5.9 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| width | 15.24 mm |
| Maximum write cycle time (tWC) | 10 ms |
| Base Number Matches | 1 |
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