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BCX 68-16 E6327

Description
transistor npn AF 20v sot-89
Categorysemiconductor    Discrete semiconductor   
File Size515KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCX 68-16 E6327 Overview

transistor npn AF 20v sot-89

BCX 68-16 E6327 Parametric

Parameter NameAttribute value
Datasheets
BCX68
Product Photos
SOT-89 Pkg
PCN Design/Specificati
Copper Wire Bonding 07/Jan/2014
Standard Package1,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Reel (TR)
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 1V
Power - Max3W
Frequency - Transiti100MHz
Mounting TypeSurface Mou
Package / CaseTO-243AA
Supplier Device PackagePG-SOT89-4
Other NamesBCX6816E6327BTSA1BCX6816E6327HTSA1BCX6816E6327XTSP000010925
BCX68...
NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCX69 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
2
Type
BCX68-10
BCX68-16
BCX68-25
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
CB
CC
CD
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
3=E
3=E
3=E
Package
SOT89
SOT89
SOT89
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
Value
20
25
5
1
2
100
200
3
150
-65 ... 150
Value
12
Unit
V
A
mA
W
°C
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
114 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-10-06

BCX 68-16 E6327 Related Products

BCX 68-16 E6327 03006-58.2-97-K BCX68-16 BCX68-25 BCX 68-25 E6327 BCX6825E6327HTSA1 BCX6810E6327HTSA1 BCX6816E6327HTSA1
Description transistor npn AF 20v sot-89 Thermometrics 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR transistor npn AF 20v sot-89 TRANS NPN 20V 1A SOT-89 TRANS NPN 20V 1A SOT-89 TRANS NPN 20V 1A SOT-89
Is it Rohs certified? - - conform to conform to - conform to conform to conform to
Maker - - Infineon Infineon - Infineon Infineon Infineon
package instruction - - SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 - SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code - - compli compli - compliant compliant compliant
ECCN code - - EAR99 EAR99 - EAR99 EAR99 EAR99
Shell connection - - COLLECTOR COLLECTOR - COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) - - 1 A 1 A - 1 A 1 A 1 A
Collector-emitter maximum voltage - - 20 V 20 V - 20 V 20 V 20 V
Configuration - - SINGLE SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - - 100 160 - 160 85 100
JESD-30 code - - R-PSSO-F3 R-PSSO-F3 - R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Humidity sensitivity level - - 1 1 - 1 1 1
Number of components - - 1 1 - 1 1 1
Number of terminals - - 3 3 - 3 3 3
Maximum operating temperature - - 150 °C 150 °C - 150 °C 150 °C 150 °C
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - - NPN NPN - NPN NPN NPN
Maximum power dissipation(Abs) - - 1 W 1 W - 3 W 3 W 3 W
surface mount - - YES YES - YES YES YES
Terminal form - - FLAT FLAT - FLAT FLAT FLAT
Terminal location - - SINGLE SINGLE - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - - AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials - - SILICON SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) - - 100 MHz 100 MHz - 100 MHz 100 MHz 100 MHz
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